Ghods, A., Tatah, K., Stocker, M., & Johnson, K. (2025). Scaling Characteristics of Multijunction VCSELs. IEEE Journal of Selected Topics in Quantum Electronics, Selected Topics in Quantum Electronics, IEEE Journal of, IEEE J. Select. Topics Quantum Electron., 31(2: Pwr. and Effic. Scaling in Semiconductor Lasers), 1. https://doi.org/10.1109/JSTQE.2024.3467036
Παραπομπή σε μορφή Chicago (17η εκδ.)Ghods, A., K. Tatah, M. Stocker, και K. Johnson. "Scaling Characteristics of Multijunction VCSELs." IEEE Journal of Selected Topics in Quantum Electronics, Selected Topics in Quantum Electronics, IEEE Journal of, IEEE J. Select. Topics Quantum Electron. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers (2025): 1. https://doi.org/10.1109/JSTQE.2024.3467036.
Παραπομπή σε μορφή MLA (9th εκδ.)Ghods, A., et al. "Scaling Characteristics of Multijunction VCSELs." IEEE Journal of Selected Topics in Quantum Electronics, Selected Topics in Quantum Electronics, IEEE Journal of, IEEE J. Select. Topics Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, 2025, p. 1, https://doi.org/10.1109/JSTQE.2024.3467036.