Academic Journal

Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος: Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors
Συγγραφείς: Alfarisyi, S., Golec, P., Bestelink, E., Niang, K.M., Flewitt, A.J., Silva, S.R.P., Sporea, R.A.
Πηγή: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(7):3582-3589 Jul, 2023
Βάση Δεδομένων: IEEE Xplore Digital Library