Academic Journal
Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors
| Τίτλος: | Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors |
|---|---|
| Συγγραφείς: | Alfarisyi, S., Golec, P., Bestelink, E., Niang, K.M., Flewitt, A.J., Silva, S.R.P., Sporea, R.A. |
| Πηγή: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(7):3582-3589 Jul, 2023 |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
| FullText | Links: – Type: other Text: Availability: 0 |
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| Header | DbId: edseee DbLabel: IEEE Xplore Digital Library An: edseee.10138310 RelevancyScore: 1039 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 1039.28454589844 |
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| Items | – Name: Title Label: Title Group: Ti Data: Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Alfarisyi%2C+S%2E%22">Alfarisyi, S.</searchLink><br /><searchLink fieldCode="AR" term="%22Golec%2C+P%2E%22">Golec, P.</searchLink><br /><searchLink fieldCode="AR" term="%22Bestelink%2C+E%2E%22">Bestelink, E.</searchLink><br /><searchLink fieldCode="AR" term="%22Niang%2C+K%2EM%2E%22">Niang, K.M.</searchLink><br /><searchLink fieldCode="AR" term="%22Flewitt%2C+A%2EJ%2E%22">Flewitt, A.J.</searchLink><br /><searchLink fieldCode="AR" term="%22Silva%2C+S%2ER%2EP%2E%22">Silva, S.R.P.</searchLink><br /><searchLink fieldCode="AR" term="%22Sporea%2C+R%2EA%2E%22">Sporea, R.A.</searchLink> – Name: TitleSource Label: Source Group: Src Data: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(7):3582-3589 Jul, 2023 |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.10138310 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TED.2023.3276337 PhysicalDescription: Pagination: PageCount: 8 StartPage: 3582 Titles: – TitleFull: Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Alfarisyi, S. – PersonEntity: Name: NameFull: Golec, P. – PersonEntity: Name: NameFull: Bestelink, E. – PersonEntity: Name: NameFull: Niang, K.M. – PersonEntity: Name: NameFull: Flewitt, A.J. – PersonEntity: Name: NameFull: Silva, S.R.P. – PersonEntity: Name: NameFull: Sporea, R.A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 00189383 – Type: issn-print Value: 15579646 – Type: issn-locals Value: edseee.IEEEJournals Numbering: – Type: volume Value: 70 – Type: issue Value: 7 Titles: – TitleFull: IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices Type: main |
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