Alfarisyi, S., Golec, P., Bestelink, E., Niang, K., Flewitt, A., Silva, S., & Sporea, R. (2023). Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors. IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, 70(7), 3582. https://doi.org/10.1109/TED.2023.3276337
Παραπομπή σε μορφή Chicago (17η εκδ.)Alfarisyi, S., P. Golec, E. Bestelink, K.M Niang, A.J Flewitt, S.R.P Silva, και R.A Sporea. "Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices 70, no. 7 (2023): 3582. https://doi.org/10.1109/TED.2023.3276337.
Παραπομπή σε μορφή MLA (9th εκδ.)Alfarisyi, S., et al. "Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, vol. 70, no. 7, 2023, p. 3582, https://doi.org/10.1109/TED.2023.3276337.