Report
LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS
| Title: | LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS |
|---|---|
| Authors: | GONG JS, ZHENG BZ, ZHUANG WH, XU ZY, GONG JS ACAD SINICAINST SEMICONDBEIJINGPEOPLES R CHINA |
| Publication Year: | 1982 |
| Collection: | Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| Subject Terms: | 光电子学 |
| Document Type: | report |
| Language: | English |
| Relation: | CHINESE PHYSICS; GONG JS; ZHENG BZ; ZHUANG WH; XU ZY.LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS,CHINESE PHYSICS ,1982,2(1):246-252; http://ir.semi.ac.cn/handle/172111/14815 |
| Availability: | http://ir.semi.ac.cn/handle/172111/14815 |
| Accession Number: | edsbas.D3E02B99 |
| Database: | BASE |
| Description not available. |