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LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS

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Τίτλος: LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS
Συγγραφείς: GONG JS, ZHENG BZ, ZHUANG WH, XU ZY, GONG JS ACAD SINICAINST SEMICONDBEIJINGPEOPLES R CHINA
Έτος έκδοσης: 1982
Συλλογή: Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
Θεματικοί όροι: 光电子学
Τύπος εγγράφου: report
Γλώσσα: English
Relation: CHINESE PHYSICS; GONG JS; ZHENG BZ; ZHUANG WH; XU ZY.LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS,CHINESE PHYSICS ,1982,2(1):246-252; http://ir.semi.ac.cn/handle/172111/14815
Διαθεσιμότητα: http://ir.semi.ac.cn/handle/172111/14815
Αριθμός Καταχώρησης: edsbas.D3E02B99
Βάση Δεδομένων: BASE
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  Data: LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS
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  Data: CHINESE PHYSICS; GONG JS; ZHENG BZ; ZHUANG WH; XU ZY.LASER ANNEALING OF ZN-IMPLANTED GAAS AND LASER ALLOYING OF OHMIC CONTACTS ON GAAS,CHINESE PHYSICS ,1982,2(1):246-252; http://ir.semi.ac.cn/handle/172111/14815
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