Growth of Stacked InAs/InP Quantum Dot Structures

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος: Growth of Stacked InAs/InP Quantum Dot Structures
Συγγραφείς: Barik, Satyanarayan, Jagadish, Chennupati, Tan, Hark Hoe
Πηγή: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
Στοιχεία εκδότη: Institute of Electrical and Electronics Engineers (IEEE Inc)
Έτος έκδοσης: 2006
Συλλογή: Australian National University: ANU Digital Collections
Θεματικοί όροι: Keywords: Arsenic compounds, Chemical reactions, Crystallography, Ecology, Epitaxial growth, Gallium, Gallium alloys, Ion beam assisted deposition, Light emission, Linewidth, Low pressure chemical vapor deposition, Luminescence, Metallizing, Metals, Nanoscience, Na InAs/InP quantum dots, Metal-organic chemical vapor deposition
Θέμα γεωγραφικό: Brisbane Australia
Περιγραφή: We report on the growth of self-assembled InAs/InP quantum dots (QDs) on the lattice matched GaInAsP buffer by low pressure Metal Organic Chemical Vapor Deposition and discuss the effects of a thin GaAs interlayer, the QD growth time, and the V/III ratio
Τύπος εγγράφου: conference object
Περιγραφή αρχείου: application/pdf
Γλώσσα: unknown
ISBN: 978-1-4244-0453-7
1-4244-0453-3
Relation: International Conference on Nanoscience and Nanotechnology (ICONN 2006); https://hdl.handle.net/1885/26827
DOI: 10.1109/ICONN.2006.340651
Διαθεσιμότητα: https://hdl.handle.net/1885/26827
https://doi.org/10.1109/ICONN.2006.340651
https://openresearch-repository.anu.edu.au/bitstreams/d9069578-3cfb-4c6d-b812-4f1aed3f8903/download
https://openresearch-repository.anu.edu.au/bitstreams/87eb2d90-3bcc-4c25-94ea-07e5fefb4a09/download
https://openresearch-repository.anu.edu.au/bitstreams/3ce18779-0a11-4ebf-a6bb-d2861485314f/download
Αριθμός Καταχώρησης: edsbas.B2AF169E
Βάση Δεδομένων: BASE