Academic Journal

Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος: Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots
Συγγραφείς: Höfer, B., Zhang, J., Wildmann, J., Zallo, E., Trotta, R., Ding, Fei, Rastelli, A., Schmidt, O.G.
Πηγή: Applied Physics Letters 110 (2017), Nr. 15
Στοιχεία εκδότη: American Institute of Physics Inc.
Έτος έκδοσης: 2017
Συλλογή: Institutional Repository of Leibniz Universität Hannover
Θεματικοί όροι: Electric fields, Excitons, Locks (fasteners), Nanocrystals, Particle beams, Photons, Piezoelectric actuators, Tuning, Biaxial strains, Closed-loop feedback, Emission energies, Excitonic emission energy, Indistinguishability, Neutral excitons, Single-photon source, Vertical electric fields, Semiconductor quantum dots, ddc:530
Περιγραφή: Independent tuning of emission energy and decay time of neutral excitons confined in single self-assembled In(Ga)As/GaAs quantum dots is achieved by simultaneously employing vertical electric fields and lateral biaxial strain fields. By locking the emission energy via a closed-loop feedback on the piezoelectric actuator used to control the strain in the quantum dot, we continuously decrease the decay time of an exciton from 1.4 to 0.7 ns. Both perturbations are fully electrically controlled and their combination offers a promising route to engineer the indistinguishability of photons emitted from spatially separated single photon sources. © 2017 Author(s).
Τύπος εγγράφου: article in journal/newspaper
Γλώσσα: English
ISSN: 00036951
Relation: http://dx.doi.org/10.15488/2246
DOI: 10.15488/2246
Διαθεσιμότητα: http://www.repo.uni-hannover.de/handle/123456789/2272
https://doi.org/10.15488/2246
Rights: Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. ; frei zugänglich
Αριθμός Καταχώρησης: edsbas.5EC303F
Βάση Δεδομένων: BASE