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Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

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Τίτλος: Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
Συγγραφείς: Zhou, B, Pan, SW, Chen, R, Chen, SY, Li, C, Lai, HK, Yu, JZ, Zhu, XF, 李成
Πηγή: http://dx.doi.org/10.1016/j.ssc.2009.08.001.
Έτος έκδοσης: 2009
Συλλογή: Xiamen University Institutional Repository
Θεματικοί όροι: POROUS SILICON LAYER, VISIBLE PHOTOLUMINESCENCE, SURFACE-MORPHOLOGY, THIN-FILMS, SI, GERMANIUM, SUPERLATTICES, NANOCRYSTALS, RELAXATION, GROWTH
Περιγραφή: Nation Natural Science Foundation of China [50672079, 60676027, 60837001, 60776007]; National Basic Research Program of China (973 Program) [2007CB613404]; China-MOST International Sci & Tech Cooperation and Exchange [2008DFA51230] ; SiGe/Si heterogeneous nanostructures are prepared by electrochemical anodization of SiGe/Si multiple layers grown by ultra-high vacuum chemical vapor deposition. Nanorods with densities up to similar to 2 x 10(11) cm(-2) have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-sectional views. The samples show visible photoluminescence with multiple peaks and narrow widths which is related to the interference effect. Finally, a model is proposed to explain the role of strain during the anodization of SiGe/Si multiple layers. (C) 2009 Elsevier Ltd. All rights reserved.
Τύπος εγγράφου: article in journal/newspaper
Γλώσσα: English
ISSN: 0038-1098
Relation: Solid State Communications, 2009,149(43-44):1897-1901; WOS:000271332400008; http://dspace.xmu.edu.cn/handle/2288/69548
Διαθεσιμότητα: http://dspace.xmu.edu.cn/handle/2288/69548
Αριθμός Καταχώρησης: edsbas.527CF0AD
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  – Url: https://www.sciencedirect.com/science/link?ref_val_fmt=info:ofi/fmt:kev:mtx:journal&svc_val_fmt=info:ofi/fmt:kev:mtx:sch_srv&rfr_dat=saltver:1&rfr_dat=origin:EBSCOLINK&ctx_enc=info:ofi/enc:UTF-8&ctx_ver=Z39.88-2004&svc.fulltext=yes&rft.issn=00381098&rft.volume=&rft.title=Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
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  – Url: https://resolver.ebsco.com/c/fiv2js/result?sid=EBSCO:edsbas&genre=article&issn=00381098&ISBN=&volume=&issue=&date=20090101&spage=&pages=&title=http://dx.doi.org/10.1016/j.ssc.2009.08.001&atitle=Strain-induced%20anodization%20of%20SiGe%2FSi%20multiple%20layers%20to%20form%20high%20density%20SiGe%2FSi%20heterogeneous%20nanorods&aulast=Zhou%2C%20B&id=DOI:
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Header DbId: edsbas
DbLabel: BASE
An: edsbas.527CF0AD
RelevancyScore: 770
AccessLevel: 3
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PubTypeId: academicJournal
PreciseRelevancyScore: 769.994262695313
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zhou%2C+B%22">Zhou, B</searchLink><br /><searchLink fieldCode="AR" term="%22Pan%2C+SW%22">Pan, SW</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+R%22">Chen, R</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+SY%22">Chen, SY</searchLink><br /><searchLink fieldCode="AR" term="%22Li%2C+C%22">Li, C</searchLink><br /><searchLink fieldCode="AR" term="%22Lai%2C+HK%22">Lai, HK</searchLink><br /><searchLink fieldCode="AR" term="%22Yu%2C+JZ%22">Yu, JZ</searchLink><br /><searchLink fieldCode="AR" term="%22Zhu%2C+XF%22">Zhu, XF</searchLink><br /><searchLink fieldCode="AR" term="%22李成%22">李成</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <i>http://dx.doi.org/10.1016/j.ssc.2009.08.001</i>.
– Name: DatePubCY
  Label: Publication Year
  Group: Date
  Data: 2009
– Name: Subset
  Label: Collection
  Group: HoldingsInfo
  Data: Xiamen University Institutional Repository
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22POROUS+SILICON+LAYER%22">POROUS SILICON LAYER</searchLink><br /><searchLink fieldCode="DE" term="%22VISIBLE+PHOTOLUMINESCENCE%22">VISIBLE PHOTOLUMINESCENCE</searchLink><br /><searchLink fieldCode="DE" term="%22SURFACE-MORPHOLOGY%22">SURFACE-MORPHOLOGY</searchLink><br /><searchLink fieldCode="DE" term="%22THIN-FILMS%22">THIN-FILMS</searchLink><br /><searchLink fieldCode="DE" term="%22SI%22">SI</searchLink><br /><searchLink fieldCode="DE" term="%22GERMANIUM%22">GERMANIUM</searchLink><br /><searchLink fieldCode="DE" term="%22SUPERLATTICES%22">SUPERLATTICES</searchLink><br /><searchLink fieldCode="DE" term="%22NANOCRYSTALS%22">NANOCRYSTALS</searchLink><br /><searchLink fieldCode="DE" term="%22RELAXATION%22">RELAXATION</searchLink><br /><searchLink fieldCode="DE" term="%22GROWTH%22">GROWTH</searchLink>
– Name: Abstract
  Label: Description
  Group: Ab
  Data: Nation Natural Science Foundation of China [50672079, 60676027, 60837001, 60776007]; National Basic Research Program of China (973 Program) [2007CB613404]; China-MOST International Sci & Tech Cooperation and Exchange [2008DFA51230] ; SiGe/Si heterogeneous nanostructures are prepared by electrochemical anodization of SiGe/Si multiple layers grown by ultra-high vacuum chemical vapor deposition. Nanorods with densities up to similar to 2 x 10(11) cm(-2) have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-sectional views. The samples show visible photoluminescence with multiple peaks and narrow widths which is related to the interference effect. Finally, a model is proposed to explain the role of strain during the anodization of SiGe/Si multiple layers. (C) 2009 Elsevier Ltd. All rights reserved.
– Name: TypeDocument
  Label: Document Type
  Group: TypDoc
  Data: article in journal/newspaper
– Name: Language
  Label: Language
  Group: Lang
  Data: English
– Name: ISSN
  Label: ISSN
  Group: ISSN
  Data: 0038-1098
– Name: NoteTitleSource
  Label: Relation
  Group: SrcInfo
  Data: Solid State Communications, 2009,149(43-44):1897-1901; WOS:000271332400008; http://dspace.xmu.edu.cn/handle/2288/69548
– Name: URL
  Label: Availability
  Group: URL
  Data: http://dspace.xmu.edu.cn/handle/2288/69548
– Name: AN
  Label: Accession Number
  Group: ID
  Data: edsbas.527CF0AD
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edsbas&AN=edsbas.527CF0AD
RecordInfo BibRecord:
  BibEntity:
    Languages:
      – Text: English
    Subjects:
      – SubjectFull: POROUS SILICON LAYER
        Type: general
      – SubjectFull: VISIBLE PHOTOLUMINESCENCE
        Type: general
      – SubjectFull: SURFACE-MORPHOLOGY
        Type: general
      – SubjectFull: THIN-FILMS
        Type: general
      – SubjectFull: SI
        Type: general
      – SubjectFull: GERMANIUM
        Type: general
      – SubjectFull: SUPERLATTICES
        Type: general
      – SubjectFull: NANOCRYSTALS
        Type: general
      – SubjectFull: RELAXATION
        Type: general
      – SubjectFull: GROWTH
        Type: general
    Titles:
      – TitleFull: Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zhou, B
      – PersonEntity:
          Name:
            NameFull: Pan, SW
      – PersonEntity:
          Name:
            NameFull: Chen, R
      – PersonEntity:
          Name:
            NameFull: Chen, SY
      – PersonEntity:
          Name:
            NameFull: Li, C
      – PersonEntity:
          Name:
            NameFull: Lai, HK
      – PersonEntity:
          Name:
            NameFull: Yu, JZ
      – PersonEntity:
          Name:
            NameFull: Zhu, XF
      – PersonEntity:
          Name:
            NameFull: 李成
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Type: published
              Y: 2009
          Identifiers:
            – Type: issn-print
              Value: 00381098
            – Type: issn-locals
              Value: edsbas
          Titles:
            – TitleFull: http://dx.doi.org/10.1016/j.ssc.2009.08.001
              Type: main
ResultId 1