Bibliographic Details
| Title: |
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods |
| Authors: |
Zhou, B, Pan, SW, Chen, R, Chen, SY, Li, C, Lai, HK, Yu, JZ, Zhu, XF, 李成 |
| Source: |
http://dx.doi.org/10.1016/j.ssc.2009.08.001. |
| Publication Year: |
2009 |
| Collection: |
Xiamen University Institutional Repository |
| Subject Terms: |
POROUS SILICON LAYER, VISIBLE PHOTOLUMINESCENCE, SURFACE-MORPHOLOGY, THIN-FILMS, SI, GERMANIUM, SUPERLATTICES, NANOCRYSTALS, RELAXATION, GROWTH |
| Description: |
Nation Natural Science Foundation of China [50672079, 60676027, 60837001, 60776007]; National Basic Research Program of China (973 Program) [2007CB613404]; China-MOST International Sci & Tech Cooperation and Exchange [2008DFA51230] ; SiGe/Si heterogeneous nanostructures are prepared by electrochemical anodization of SiGe/Si multiple layers grown by ultra-high vacuum chemical vapor deposition. Nanorods with densities up to similar to 2 x 10(11) cm(-2) have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-sectional views. The samples show visible photoluminescence with multiple peaks and narrow widths which is related to the interference effect. Finally, a model is proposed to explain the role of strain during the anodization of SiGe/Si multiple layers. (C) 2009 Elsevier Ltd. All rights reserved. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| ISSN: |
0038-1098 |
| Relation: |
Solid State Communications, 2009,149(43-44):1897-1901; WOS:000271332400008; http://dspace.xmu.edu.cn/handle/2288/69548 |
| Availability: |
http://dspace.xmu.edu.cn/handle/2288/69548 |
| Accession Number: |
edsbas.527CF0AD |
| Database: |
BASE |