Academic Journal
Peculiarities of silicon basis growing for polysilicon production
| Title: | Peculiarities of silicon basis growing for polysilicon production |
|---|---|
| Source: | Eastern-European Journal of Enterprise Technologies; Том 5, № 8(59) (2012): Energy saving technologies and equipment; 47-51 Восточно-Европейский журнал передовых технологий; Том 5, № 8(59) (2012): Энергосберегающие технологии и оборудование; 47-51 Східно-Європейський журнал передових технологій; Том 5, № 8(59) (2012): Енергозберігаючі технології та обладнання; 47-51 |
| Publisher Information: | PRIVAT COMPANY "TECHNOLOGY CENTER", 2012. |
| Publication Year: | 2012 |
| Subject Terms: | полікристалічний кремній, напилений шар, напруга, газове середовище, індуктор, поликристаллический кремний, напыленный слой, напряжение, газовая среда, индуктор, 7. Clean energy, polysilicon, evaporated layer, stress, gas environment, УДК 621.315.592 |
| Description: | The article considers the most accepted and well-proven method of polysilicon production, using the “Siemenstechnology”, which has been used for over 50 years. For this process, silicon bar-wafers are grown. There are certain requirements for bar-wafers as to the degree of purity, level of residual thermal stress and mechanical strength. To achieve high purity of bar-wafers, growing process is carried out in a vacuum. The analysis of the growing process showed that during the vacuum growing, silicon vaporizes from the surface of melt and condenses on the cold surfaces of accessory, walls of growing chamber and on the surface of the grown bar-wafers. One of the areas that may be used for bar-wafers growing is the growing in the gas environment (e.g. argon) at the pressure greater or equal to atmospheric. In this case, the vaporization of melt zone reduces considerably, and the surface of bar-wafer will not have the evaporated silicon layer, its oxides and nitrides. The conversion to the growing in gas environment using multiturn, with consecutive joining of turns of inductor, leads to gas ionization and accident risk. To reduce the stress on inductor it is necessary to use a single-turn inductor. While applying a single-turn inductor, the stress is inversely proportional to the width of inductor’s turn. That is why, the width plays essential role in the melting process, as it helps to avoid accident risk and gas ionization. Рассмотрено влияние среды выращивания кремниевых основ на образование на их поверхности напыленного слоя. Исключение образования на поверхности кремниевых основ напыленного слоя предлагается путем проведения процесса плавки в газовой среде при давлении выше атмосферного. Розглянуто вплив середовища вирощування кремнієвих основ на утворення на їх поверхні напиленого шару. Виключення утворення на поверхні кремнієвих основ напиленого шару пропонується шляхом проведення процесу плавки в газовому середовищі при тиску вище атмосферного. |
| Document Type: | Article |
| File Description: | application/pdf |
| Language: | Ukrainian |
| ISSN: | 1729-3774 1729-4061 |
| Access URL: | http://journals.uran.ua/eejet/article/view/4614 |
| Rights: | CC BY |
| Accession Number: | edsair.scientific.p..e22f5f2a80199dffc17828a28472b80c |
| Database: | OpenAIRE |
| ISSN: | 17293774 17294061 |
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