Conference
Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates
| Τίτλος: | Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates |
|---|---|
| Συγγραφείς: | Kelner, Oleg, Tsatsulnikov, Andrey, Nikolaev, Andrey, Zavarin, Evgenii |
| Στοιχεία εκδότη: | St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2023. |
| Έτος έκδοσης: | 2023 |
| Θεματικοί όροι: | MOVPE, полевые транзисторы, elastic strain, silicon, упругие напряжения, HEMT, ГФЭ МОС, кремний |
| Περιγραφή: | High Electron Mobility Transistor (HEMT) heterostructures based on III-N semiconductors (nitrides of Al and Ga) have become increasingly widespread in recent years. They are used in the manufacture of microwave transistors, high-power transistors for power electronics, etc. However, mass application of such transistors requires a reduction in the cost of heterostructures due to the use of cheap substrates and an increase in the area of one substrate. Thus, substrates of single-crystal Si(111) are of great interest. They are available in diameters up to 300 mm, and the possibility of growing III-N structures has already been demonstrated for them. Nevertheless, the epitaxy of III-N HEMT structures on Si substrates is complicated due to a number of technological difficulties in the epitaxy of such structures. In this paper, the dynamics of curvature and residual bow of III-N HEMT structures were experimentally studied during epitaxy and after cooling for Si(111) substrates with a diameter of 100 mm and various thicknesses of substrates and grown semiconductor films. It has been shown that the technology developing and optimization should be carried out on thin substrates, while device structures should be grown on thick substrates. Furthermore, the mechanical stresses can be controlled accurately enough so after epitaxy the bow of the structure is minimal. В настоящей работе проведено экспериментальное исследование динамики кривизны и остаточного прогиба III-N HEMT структур во время и после эпитаксии для подложек Si(111) диаметром 100 мм различной толщины; была определена динамика кривизны от толщины структуры во время роста, что позволяет определить параметры эпитаксии для получения необходимого прогиба структур после остывания. |
| Τύπος εγγράφου: | Conference object |
| Γλώσσα: | English |
| DOI: | 10.18721/jpm.161.308 |
| Αριθμός Καταχώρησης: | edsair.doi...........f6637f59bb6398b4dd8c2d736ac84c76 |
| Βάση Δεδομένων: | OpenAIRE |
| DOI: | 10.18721/jpm.161.308 |
|---|