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1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

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Τίτλος: 1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs
Συγγραφείς: Rochas, Stanislav, Blokhin, Sergei, Babichev, Andrey, Karachinsky, Leonid, Novikov, Innokenty, Blokhin, Aleksey, Bobrov, Mikhail, Maleev, Nikolai, Andryushkin, Vladislav, Bougrov, Vladislav, Gladyshev, Andrey, Melnichenko, Ivan, Voropaev, Kirill, Zhumaeva, Irina, Ustinov, Victor, Li, Hiu, Tian, Si-Cong, Han, Saiyi, Sapunov, Georgiy, Egorov, Anton, Bimberg, Dieter
Στοιχεία εκδότη: St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2023.
Έτος έκδοσης: 2023
Θεματικοί όροι: tunnel junction, туннельный переход, спекание пластин, strained quantum wells, wafer fusion, molecular-beam epitaxy, напряженные квантовые ямы, data transmission, 7. Clean energy, VCSEL, молекулярно-пучковая эпитаксия, передача данных, ВИЛ
Περιγραφή: Были изготовлены высокоскоростные вертикально излучающие лазеры (ВИЛ) спектрального диапазона 1550 нм на основе 10 напряженных In(Al)GaAs КЯ с использованием метода молекулярно-пучковой эпитаксии и двойного прямого молекулярного спекания эпитаксиальных пластин. Приборы демонстрируют пороговый ток 2 мА и максимальную выходную оптическую мощность 4,8 мВт. Эффект насыщающегося поглотителя наблюдался при температуре выше 50 °С. Малосигнальный анализ показал значения ширины полосы модуляции f 3dB и резонансной частоты fR 8 ГГц и 12 ГГц, соответственно. Была продемонстрирована скорость передачи данных до 20 Гбит/с в режиме NRZ при 20 °C на расстояние 1000 метров.
High-speed vertical-cavity surface-emitting lasers of 1550 nm spectral range based on ten compressively strained In(Al)GaAs QWs were fabricated by molecular-beam epitaxy and direct double wafer-fusion technique. The devices demonstrate threshold current of 2 mA and maximum output optical power of 4.8 mW. The effect of saturable absorber was observed at a temperature above 50 °C. Small signal analysis revealed that modulation bandwidth f 3dB and the resonant frequency fR of 8 GHz and 12 GHz, respectively, can be reached for presented VCSELs design. The NRZ-mode data rate up to 20 Gbps at 20 °C across the distance of 1000 meters was demonstrated.
Τύπος εγγράφου: Other literature type
Γλώσσα: English
DOI: 10.18721/jpm.161.178
Αριθμός Καταχώρησης: edsair.doi...........be96d41687b5f38a46d8b8fe6b945b8f
Βάση Δεδομένων: OpenAIRE
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  Data: 1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs
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  Data: <searchLink fieldCode="AR" term="%22Rochas%2C+Stanislav%22">Rochas, Stanislav</searchLink><br /><searchLink fieldCode="AR" term="%22Blokhin%2C+Sergei%22">Blokhin, Sergei</searchLink><br /><searchLink fieldCode="AR" term="%22Babichev%2C+Andrey%22">Babichev, Andrey</searchLink><br /><searchLink fieldCode="AR" term="%22Karachinsky%2C+Leonid%22">Karachinsky, Leonid</searchLink><br /><searchLink fieldCode="AR" term="%22Novikov%2C+Innokenty%22">Novikov, Innokenty</searchLink><br /><searchLink fieldCode="AR" term="%22Blokhin%2C+Aleksey%22">Blokhin, Aleksey</searchLink><br /><searchLink fieldCode="AR" term="%22Bobrov%2C+Mikhail%22">Bobrov, Mikhail</searchLink><br /><searchLink fieldCode="AR" term="%22Maleev%2C+Nikolai%22">Maleev, Nikolai</searchLink><br /><searchLink fieldCode="AR" term="%22Andryushkin%2C+Vladislav%22">Andryushkin, Vladislav</searchLink><br /><searchLink fieldCode="AR" term="%22Bougrov%2C+Vladislav%22">Bougrov, Vladislav</searchLink><br /><searchLink fieldCode="AR" term="%22Gladyshev%2C+Andrey%22">Gladyshev, Andrey</searchLink><br /><searchLink fieldCode="AR" term="%22Melnichenko%2C+Ivan%22">Melnichenko, Ivan</searchLink><br /><searchLink fieldCode="AR" term="%22Voropaev%2C+Kirill%22">Voropaev, Kirill</searchLink><br /><searchLink fieldCode="AR" term="%22Zhumaeva%2C+Irina%22">Zhumaeva, Irina</searchLink><br /><searchLink fieldCode="AR" term="%22Ustinov%2C+Victor%22">Ustinov, Victor</searchLink><br /><searchLink fieldCode="AR" term="%22Li%2C+Hiu%22">Li, Hiu</searchLink><br /><searchLink fieldCode="AR" term="%22Tian%2C+Si-Cong%22">Tian, Si-Cong</searchLink><br /><searchLink fieldCode="AR" term="%22Han%2C+Saiyi%22">Han, Saiyi</searchLink><br /><searchLink fieldCode="AR" term="%22Sapunov%2C+Georgiy%22">Sapunov, Georgiy</searchLink><br /><searchLink fieldCode="AR" term="%22Egorov%2C+Anton%22">Egorov, Anton</searchLink><br /><searchLink fieldCode="AR" term="%22Bimberg%2C+Dieter%22">Bimberg, Dieter</searchLink>
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  Data: St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2023.
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  Data: <searchLink fieldCode="DE" term="%22tunnel+junction%22">tunnel junction</searchLink><br /><searchLink fieldCode="DE" term="%22туннельный+переход%22">туннельный переход</searchLink><br /><searchLink fieldCode="DE" term="%22спекание+пластин%22">спекание пластин</searchLink><br /><searchLink fieldCode="DE" term="%22strained+quantum+wells%22">strained quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22wafer+fusion%22">wafer fusion</searchLink><br /><searchLink fieldCode="DE" term="%22molecular-beam+epitaxy%22">molecular-beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22напряженные+квантовые+ямы%22">напряженные квантовые ямы</searchLink><br /><searchLink fieldCode="DE" term="%22data+transmission%22">data transmission</searchLink><br /><searchLink fieldCode="DE" term="%227%2E+Clean+energy%22">7. Clean energy</searchLink><br /><searchLink fieldCode="DE" term="%22VCSEL%22">VCSEL</searchLink><br /><searchLink fieldCode="DE" term="%22молекулярно-пучковая+эпитаксия%22">молекулярно-пучковая эпитаксия</searchLink><br /><searchLink fieldCode="DE" term="%22передача+данных%22">передача данных</searchLink><br /><searchLink fieldCode="DE" term="%22ВИЛ%22">ВИЛ</searchLink>
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  Data: Были изготовлены высокоскоростные вертикально излучающие лазеры (ВИЛ) спектрального диапазона 1550 нм на основе 10 напряженных In(Al)GaAs КЯ с использованием метода молекулярно-пучковой эпитаксии и двойного прямого молекулярного спекания эпитаксиальных пластин. Приборы демонстрируют пороговый ток 2 мА и максимальную выходную оптическую мощность 4,8 мВт. Эффект насыщающегося поглотителя наблюдался при температуре выше 50 °С. Малосигнальный анализ показал значения ширины полосы модуляции f 3dB и резонансной частоты fR 8 ГГц и 12 ГГц, соответственно. Была продемонстрирована скорость передачи данных до 20 Гбит/с в режиме NRZ при 20 °C на расстояние 1000 метров.<br />High-speed vertical-cavity surface-emitting lasers of 1550 nm spectral range based on ten compressively strained In(Al)GaAs QWs were fabricated by molecular-beam epitaxy and direct double wafer-fusion technique. The devices demonstrate threshold current of 2 mA and maximum output optical power of 4.8 mW. The effect of saturable absorber was observed at a temperature above 50 °C. Small signal analysis revealed that modulation bandwidth f 3dB and the resonant frequency fR of 8 GHz and 12 GHz, respectively, can be reached for presented VCSELs design. The NRZ-mode data rate up to 20 Gbps at 20 °C across the distance of 1000 meters was demonstrated.
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      – SubjectFull: tunnel junction
        Type: general
      – SubjectFull: туннельный переход
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      – SubjectFull: спекание пластин
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      – SubjectFull: strained quantum wells
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      – TitleFull: 1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs
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