Bibliographic Details
| Title: |
E-beam resist AR-N 7520 in the formation of the photonic structures |
| Authors: |
Fetisenkova, Ksenia, Melnikov, Alexander, Miakonkikh, Andrey, Rogozhin, Alexander, Tatarintsev, Andrey |
| Publisher Information: |
St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2024. |
| Publication Year: |
2024 |
| Subject Terms: |
плазмохимическое травление, reactive-ion etching, electron-beam lithography, кинетика процессов травления, электронно-лучевая литография, волновод, etching kinetic, новолак, waveguide, novolak |
| Description: |
The study of plasma resistance of the AR-N 7520 was carried out. The selectivity of the reactive ion etching (RIE) of silicon through the mask of negative electron resist AR-N 7520 also was investigated. The dependence for selectivity was obtained at different fractions of SF6 in the feeding gas and at the different values of bias voltage. A high etching selectivity of 8 ± 1.8 was obtained for the etching process. The dependence of the resist line height on the exposure dose is presented. The optimal value for the line exposure dose was found to be 8200 pC/cm.
Проведено исследование селективности плазмохимического травления кремния Si по отношению к маске из негативного электронного резиста AR-N7520 в зависимости от доли SF6 плазмообразующей смеси SF6/C4F8 и напряжения смещения. В оптимизированном процессе была получена высокая селективность травления 8±1,8. Получено оптимальное значение дозы экспонирования для резиста AR-N 7520 – 8200 пКл/см. |
| Document Type: |
Other literature type |
| Language: |
English |
| DOI: |
10.18721/jpm.173.156 |
| Accession Number: |
edsair.doi...........4627f94c28a7efffd1e0c12da0844f65 |
| Database: |
OpenAIRE |