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Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors.

Bibliographic Details
Title: Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors.
Authors: Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Cheeks, T.L., Florez, L.T., Keramidas, V.G.
Source: International Technical Digest on Electron Devices Meeting; 1989, p555-558, 4p
Database: Complementary Index
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  Availability: 0
Header DbId: edb
DbLabel: Complementary Index
An: 92191176
RelevancyScore: 834
AccessLevel: 6
PubType: Conference
PubTypeId: conference
PreciseRelevancyScore: 833.93701171875
IllustrationInfo
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  Data: Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors.
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  Data: <searchLink fieldCode="AR" term="%22Tabatabaie%2C+N%2E%22">Tabatabaie, N.</searchLink><br /><searchLink fieldCode="AR" term="%22Sands%2C+T%2E%22">Sands, T.</searchLink><br /><searchLink fieldCode="AR" term="%22Harbison%2C+J%2EP%2E%22">Harbison, J.P.</searchLink><br /><searchLink fieldCode="AR" term="%22Gilchrist%2C+H%2EL%2E%22">Gilchrist, H.L.</searchLink><br /><searchLink fieldCode="AR" term="%22Cheeks%2C+T%2EL%2E%22">Cheeks, T.L.</searchLink><br /><searchLink fieldCode="AR" term="%22Florez%2C+L%2ET%2E%22">Florez, L.T.</searchLink><br /><searchLink fieldCode="AR" term="%22Keramidas%2C+V%2EG%2E%22">Keramidas, V.G.</searchLink>
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  Data: International Technical Digest on Electron Devices Meeting; 1989, p555-558, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edb&AN=92191176
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1109/IEDM.1989.74343
    Languages:
      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 555
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      – TitleFull: Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Tabatabaie, N.
      – PersonEntity:
          Name:
            NameFull: Sands, T.
      – PersonEntity:
          Name:
            NameFull: Harbison, J.P.
      – PersonEntity:
          Name:
            NameFull: Gilchrist, H.L.
      – PersonEntity:
          Name:
            NameFull: Cheeks, T.L.
      – PersonEntity:
          Name:
            NameFull: Florez, L.T.
      – PersonEntity:
          Name:
            NameFull: Keramidas, V.G.
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            – D: 01
              M: 01
              Text: 1989
              Type: published
              Y: 1989
          Titles:
            – TitleFull: International Technical Digest on Electron Devices Meeting
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