Tabatabaie, N., Sands, T., Harbison, J., Gilchrist, H., Cheeks, T., Florez, L., & Keramidas, V. (1989). Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors. International Technical Digest on Electron Devices Meeting, 555. https://doi.org/10.1109/IEDM.1989.74343
Παραπομπή σε μορφή Chicago (17η εκδ.)Tabatabaie, N., T. Sands, J.P Harbison, H.L Gilchrist, T.L Cheeks, L.T Florez, και V.G Keramidas. "Room Temperature Operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As Buried Metal Well Hidden-field Effect Transistors." International Technical Digest on Electron Devices Meeting 1989: 555. https://doi.org/10.1109/IEDM.1989.74343.
Παραπομπή σε μορφή MLA (9th εκδ.)Tabatabaie, N., et al. "Room Temperature Operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As Buried Metal Well Hidden-field Effect Transistors." International Technical Digest on Electron Devices Meeting, 1989, p. 555, https://doi.org/10.1109/IEDM.1989.74343.