High-temperature memristors enabled by interfacial engineering.

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος:	High-temperature memristors enabled by interfacial engineering.
Συγγραφείς:	Zhao, Jian, Jorgensen, Cameron S., Mahalingam, Krishnamurthy, Bowers, Cynthia, Sugimoto, Wataru, Ito, Kai, Kim, Seung Ju, Zhao, Ruoyu, Xu, Yichun, Liao, Han-Ting, Kalia, Rajiv K., Nakano, Aiichiro, Shimamura, Kohei, Shimojo, Fuyuki, Vashishta, Priya, Roy, Ajit K., Ge, Ning, Hu, Miao, Williams, R. Stanley, Xia, Qiangfei
Πηγή:	Science; 5/14/2026, Vol. 392 Issue 6799, p771-779, 9p
Θεματικοί όροι:	Memristors, High temperature electronics, Surfaces (Technology), Tungsten, Nonvolatile memory, Thermal stability, Hafnium oxide, Graphene
Περίληψη:	Nonvolatile memories (NVMs) that operate reliably at high temperatures are essential for electronics in extreme environments. Here, we report graphene (Gra)/HfOx/tungsten (W) memristors that operated reliably up to 700°C, with an ON/OFF current ratio of >10³, data retention >50 hours, and endurance >10⁹ switching cycles. Transmission electron microscopy revealed substantial W diffusion into the inert platinum (Pt) electrode in conventional Pt/HfOx/W memristors after high-temperature annealing, which was responsible for the thermal failure in conventional devices but not observed in Gra/HfOx/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on Gra compared with metals such as Pt. These results underscore the critical role of interfacial engineering and the potential of two-dimensional materials for enabling reliable high-temperature NVM technologies. Editor's summary: Demand for electronics that withstand extreme thermal environments is rising, spanning deep-well drilling, nuclear energy, autonomous systems, and even the surfaces of Venus and Mercury or near spacecraft engines. Although wide-band-gap semiconductors such as silicon carbide enable transistor operation up to 800°C, reliable nonvolatile memories above 300°C remain elusive. Zhao et al. introduce memristors operating above 700°C, with more than 10⁹ switching cycles, data retention for over 50 hours, ON/OFF ratios over 1000, switching speeds under 30 nanoseconds, and operating voltages under 1.5 volts. Material characterization and modeling explain this thermal resilience. These results pave the way for robust, high-temperature memory for extreme applications. —Yury Suleymanov [ABSTRACT FROM AUTHOR]
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Βάση Δεδομένων:	Complementary Index

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