Academic Journal
Analyzing Fully Depleted SOI NC‐MOSFET for Enhanced Bio‐Sensor and Digital Circuit Applications.
| Τίτλος: | Analyzing Fully Depleted SOI NC‐MOSFET for Enhanced Bio‐Sensor and Digital Circuit Applications. |
|---|---|
| Συγγραφείς: | Kumar, Vydha Pradeep, Panda, Deepak Kumar, Kumar, Aruru Sai, Reddy, B. Naresh Kumar, Reddy, Ch. Rama Prakasha, Bandyopadhyay, Supriyo |
| Πηγή: | IET Circuits, Devices & Systems (Wiley-Blackwell); 3/18/2025, Vol. 2025, p1-11, 11p |
| Θεματικοί όροι: | Computer logic, Digital electronics, Logic circuits, Digital computer simulation, Electric capacity, Metal oxide semiconductor field-effect transistors |
| Περίληψη: | The proposed research paper focuses on the study of fully depleted silicon (Si)‐on‐insulator negative capacitance metal oxide‐semiconductor field‐effect transistor (FDSOI‐NC‐MOSFET) performance for biosensor and digital circuit applications. The study mainly aims to use ferroelectric (FE) material to improve the performance and efficiency of FDSOI‐NC‐MOSFETs compared to conventional planar MOSFETs. Using TCAD software, the proposed device is simulated and analyzed under various parameter conditions (parameters like temperature, channel thickness, input supply voltages, and channel doping levels). Later, the proposed device is also designed for different biomolecular structures to analyze the selectivity and sensitivity behavior of the device. Sensitivity is the change in electrical characteristics in response to applied external stimuli or parameters like current and voltages. Variations in these parameters will affect the operating region of the device, thereby, the choice of parameters in achieving the best performance will depend on the operating conditions and device applications. NC‐MOSFET with FE materials can obtain an acceptable on/off current ratio by lowering the off current and can achieve an adequate subthreshold swing (SS), thus, observed that the NC‐MOSFET device has enhanced performance and transfer characteristics in comparison to planar MOSFET. For K = 4, at an input voltage of 0.25 V, the Ion/Ioff ratio was 6.21 × 105 and the sensitivity was 6.20 × 107 and at 0.5 V, these values rise to 8.07 × 105 and 8.073 × 107, respectively. Similarly for K = 6 and at an input voltage of 0.25 V, we observed an Ion/Ioff ratio is 1.5 × 107 and a sensitivity of 1.52 × 109. When the input voltage was increased to 0.5 V, the Ion/Ioff ratio improved to 2.07 × 107 and the sensitivity increased to 2.073 × 109. From these analyses, it is apparent that as the K‐values increase at a given input voltage, both the Ion/Ioff ratio and the sensitivity also increase significantly. Finally, in this paper, we also demonstrated the implementation and simulation of digital logic gates using the proposed NC‐MOSFET device, supporting circuit‐level design applications. [ABSTRACT FROM AUTHOR] |
| Copyright of IET Circuits, Devices & Systems (Wiley-Blackwell) is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Βάση Δεδομένων: | Complementary Index |
| FullText | Links: – Type: other Text: Availability: 0 |
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| Header | DbId: edb DbLabel: Complementary Index An: 183863908 RelevancyScore: 994 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 993.543395996094 |
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| Items | – Name: Title Label: Title Group: Ti Data: Analyzing Fully Depleted SOI NC‐MOSFET for Enhanced Bio‐Sensor and Digital Circuit Applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kumar%2C+Vydha+Pradeep%22">Kumar, Vydha Pradeep</searchLink><br /><searchLink fieldCode="AR" term="%22Panda%2C+Deepak+Kumar%22">Panda, Deepak Kumar</searchLink><br /><searchLink fieldCode="AR" term="%22Kumar%2C+Aruru+Sai%22">Kumar, Aruru Sai</searchLink><br /><searchLink fieldCode="AR" term="%22Reddy%2C+B%2E+Naresh+Kumar%22">Reddy, B. Naresh Kumar</searchLink><br /><searchLink fieldCode="AR" term="%22Reddy%2C+Ch%2E+Rama+Prakasha%22">Reddy, Ch. Rama Prakasha</searchLink><br /><searchLink fieldCode="AR" term="%22Bandyopadhyay%2C+Supriyo%22">Bandyopadhyay, Supriyo</searchLink> – Name: TitleSource Label: Source Group: Src Data: IET Circuits, Devices & Systems (Wiley-Blackwell); 3/18/2025, Vol. 2025, p1-11, 11p – Name: Subject Label: Subject Terms Group: Su Data: <searchLink fieldCode="DE" term="%22Computer+logic%22">Computer logic</searchLink><br /><searchLink fieldCode="DE" term="%22Digital+electronics%22">Digital electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Logic+circuits%22">Logic circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Digital+computer+simulation%22">Digital computer simulation</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+capacity%22">Electric capacity</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The proposed research paper focuses on the study of fully depleted silicon (Si)‐on‐insulator negative capacitance metal oxide‐semiconductor field‐effect transistor (FDSOI‐NC‐MOSFET) performance for biosensor and digital circuit applications. The study mainly aims to use ferroelectric (FE) material to improve the performance and efficiency of FDSOI‐NC‐MOSFETs compared to conventional planar MOSFETs. Using TCAD software, the proposed device is simulated and analyzed under various parameter conditions (parameters like temperature, channel thickness, input supply voltages, and channel doping levels). Later, the proposed device is also designed for different biomolecular structures to analyze the selectivity and sensitivity behavior of the device. Sensitivity is the change in electrical characteristics in response to applied external stimuli or parameters like current and voltages. Variations in these parameters will affect the operating region of the device, thereby, the choice of parameters in achieving the best performance will depend on the operating conditions and device applications. NC‐MOSFET with FE materials can obtain an acceptable on/off current ratio by lowering the off current and can achieve an adequate subthreshold swing (SS), thus, observed that the NC‐MOSFET device has enhanced performance and transfer characteristics in comparison to planar MOSFET. For K = 4, at an input voltage of 0.25 V, the Ion/Ioff ratio was 6.21 × 105 and the sensitivity was 6.20 × 107 and at 0.5 V, these values rise to 8.07 × 105 and 8.073 × 107, respectively. Similarly for K = 6 and at an input voltage of 0.25 V, we observed an Ion/Ioff ratio is 1.5 × 107 and a sensitivity of 1.52 × 109. When the input voltage was increased to 0.5 V, the Ion/Ioff ratio improved to 2.07 × 107 and the sensitivity increased to 2.073 × 109. From these analyses, it is apparent that as the K‐values increase at a given input voltage, both the Ion/Ioff ratio and the sensitivity also increase significantly. Finally, in this paper, we also demonstrated the implementation and simulation of digital logic gates using the proposed NC‐MOSFET device, supporting circuit‐level design applications. [ABSTRACT FROM AUTHOR] – Name: Abstract Label: Group: Ab Data: <i>Copyright of IET Circuits, Devices & Systems (Wiley-Blackwell) is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1049/cds2/5585625 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 1 Subjects: – SubjectFull: Computer logic Type: general – SubjectFull: Digital electronics Type: general – SubjectFull: Logic circuits Type: general – SubjectFull: Digital computer simulation Type: general – SubjectFull: Electric capacity Type: general – SubjectFull: Metal oxide semiconductor field-effect transistors Type: general Titles: – TitleFull: Analyzing Fully Depleted SOI NC‐MOSFET for Enhanced Bio‐Sensor and Digital Circuit Applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kumar, Vydha Pradeep – PersonEntity: Name: NameFull: Panda, Deepak Kumar – PersonEntity: Name: NameFull: Kumar, Aruru Sai – PersonEntity: Name: NameFull: Reddy, B. Naresh Kumar – PersonEntity: Name: NameFull: Reddy, Ch. Rama Prakasha – PersonEntity: Name: NameFull: Bandyopadhyay, Supriyo IsPartOfRelationships: – BibEntity: Dates: – D: 18 M: 03 Text: 3/18/2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 1751858X Numbering: – Type: volume Value: 2025 Titles: – TitleFull: IET Circuits, Devices & Systems (Wiley-Blackwell) Type: main |
| ResultId | 1 |