Study on interface engineering and chemical bonding of the ReS2@ZnO heterointerface for efficient charge transfer and nonlinear optical conversion efficiency.

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος:	Study on interface engineering and chemical bonding of the ReS2@ZnO heterointerface for efficient charge transfer and nonlinear optical conversion efficiency.
Συγγραφείς:	Zheng XY; Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China. wlyht@126.com., Li HY; Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China. wlyht@126.com., Shi BY; Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China. wlyht@126.com., Cao HX; Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China. wlyht@126.com., Liu Y; Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China. wlyht@126.com., Yin HT; Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China. wlyht@126.com.
Πηγή:	Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 Jan 24; Vol. 26 (4), pp. 3008-3019. Date of Electronic Publication: 2024 Jan 24.
Τύπος έκδοσης:	Journal Article
Γλώσσα:	English
Στοιχεία περιοδικού:	Publisher: Royal Society of Chemistry Country of Publication: England NLM ID: 100888160 Publication Model: Electronic Cited Medium: Internet ISSN: 1463-9084 (Electronic) Linking ISSN: 14639076 NLM ISO Abbreviation: Phys Chem Chem Phys Subsets: MEDLINE; PubMed not MEDLINE
Imprint Name(s):	Original Publication: Cambridge [England] : Royal Society of Chemistry, c1999-
Περίληψη:	Rhenium sulfide (ReS2) has emerged as a promising two-dimensional material, demonstrating broad-spectrum visible absorption properties that make it highly relevant for diverse optoelectronic applications. Manipulating and optimizing the pathway of photogenerated carriers play a pivotal role in enhancing the efficiency of charge separation and transfer in novel semiconductor composites. This study focuses on the strategic construction of a semiconductor heterostructure by synthesizing ZnO on vacancy-containing ReS2 (VRe-ReS2) through chemical bonding processes. The ingeniously engineered built-in electric field within the heterostructure effectively suppresses the recombination of photogenerated electron-hole pairs. A direct and well-established interfacial connection between VRe-ReS2 and ZnO is achieved through a robust Zn-S bond. This distinctive bond configuration leads to enhanced nonlinear optical conversion efficiency, attributed to shortened carrier migration distances and accelerated charge transfer rates. Furthermore, theoretical calculations unveil the superior chemical interactions between Re vacancies and sulfide moieties, facilitating the formation of Zn-S bonds. The photoluminescence (PL) intensity is increased by the formation of VRe-ReS2 and ZnO heterostructure and the PL quantum yield of VRe-ReS2 is improved. The intricate impact of the Zn-S bond on the nonlinear absorption behavior of the VRe-ReS2@ZnO heterostructure is systematically investigated using femtosecond Z-scan techniques. The charge transfer from ZnO to ReS2 defect levels induces a transition from saturable absorption to reverse saturable absorption in the VRe-ReS2@ZnO heterostructure. Transient absorption measurements further confirm the presence of the Zn-S bond between the interfaces, as evidenced by the prolonged relaxation time (τ3) in the VRe-ReS2@ZnO heterostructure. This study offers valuable insights into the rational construction of heterojunctions through tailored interfacial bonding and surface/interface charge transfer pathways. These endeavors facilitate the modulation of electron transfer dynamics, ultimately yielding superior nonlinear optical conversion efficiency and effective charge regulation in optoelectronic functional materials.
Entry Date(s):	Date Created: 20240105 Latest Revision: 20240124
Update Code:	20260130
DOI:	10.1039/d3cp04775j
PMID:	38179673
Βάση Δεδομένων:	MEDLINE

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