Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism.

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος:	Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism.
Συγγραφείς:	Wang ZM; Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China., Yao CB; Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China., Wang LY; Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China., Wang X; Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China., Jiang CH; Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China., Yin HT; Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China.
Πηγή:	ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Apr 05; Vol. 15 (13), pp. 17364-17376. Date of Electronic Publication: 2023 Mar 27.
Τύπος έκδοσης:	Journal Article
Γλώσσα:	English
Στοιχεία περιοδικού:	Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Imprint Name(s):	Original Publication: Washington, D.C. : American Chemical Society
Περίληψη:	Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS2. The strain and interface engineering of MoS2/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS2 on different substrates and electron-hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS2, the relative numerical changes of physical parameters of MoS2 films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.
Contributed Indexing:	Keywords: 2D materials; Raman spectroscopy; light-matter coupling; nonlinear optic; photoluminescence; strain and interface engineering
Entry Date(s):	Date Created: 20230328 Date Completed: 20230406 Latest Revision: 20230411
Update Code:	20260130
DOI:	10.1021/acsami.3c00706
PMID:	36973948
Βάση Δεδομένων:	MEDLINE

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