Academic Journal
Advances in Optimization Strategies of Multicomponent Amorphous Oxide Semiconductors for Thin‐Film Transistors.
| Τίτλος: | Advances in Optimization Strategies of Multicomponent Amorphous Oxide Semiconductors for Thin‐Film Transistors. |
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| Συγγραφείς: | Chen, Yuyun1,2 (AUTHOR), Xu, Guodong1,2 (AUTHOR), Chen, Yuanming1,2 (AUTHOR), Wu, Weijing3 (AUTHOR), Yao, Ruohe3 (AUTHOR), Shen, Yi1,2 (AUTHOR) yishen@goworld-lcd.com |
| Πηγή: | Physica Status Solidi. A: Applications & Materials Science. 10/6/2026, Vol. 223 Issue 19, p1-14. 14p. |
| Θεματικοί όροι: | *Thin film transistors, *Bilayers (Solid state physics), *Charge carrier mobility, *Amorphous semiconductors |
| Περίληψη: | This paper systematically summarizes the recent advances in modifying multicomponent amorphous oxide semiconductors (AOS) to enhance the overall performance of thin‐film transistors (TFTs), focusing primarily on field‐effect mobility and operational stability against bias and illumination stress. Two mainstream strategies—single‐layer modification and bilayer structure design—were reviewed. The mechanisms of these strategies for influencing TFT characteristics were discussed in detail by examining unmodified versus modified single‐layer oxides and single‐layer versus bilayer oxides under consistent fabrication and testing conditions. This comparative approach minimizes cross‐study deviations. Finally, the applicable scenarios for AOS TFTs were clarified by evaluating the current status of performance (with an emphasis on mobility and negative bias illumination stress stability) achieved through those two modification approaches. [ABSTRACT FROM AUTHOR] |
| Βάση Δεδομένων: | Academic Search Index |
| FullText | Links: – Type: other Text: Availability: 0 |
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| Header | DbId: asx DbLabel: Academic Search Index An: 197543684 RelevancyScore: 1452 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 1452.43041992188 |
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| Items | – Name: Title Label: Title Group: Ti Data: Advances in Optimization Strategies of Multicomponent Amorphous Oxide Semiconductors for Thin‐Film Transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chen%2C+Yuyun%22">Chen, Yuyun</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Guodong%22">Xu, Guodong</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Yuanming%22">Chen, Yuanming</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Weijing%22">Wu, Weijing</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yao%2C+Ruohe%22">Yao, Ruohe</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shen%2C+Yi%22">Shen, Yi</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> yishen@goworld-lcd.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Physica+Status+Solidi%2E+A%3A+Applications+%26+Materials+Science%22">Physica Status Solidi. A: Applications & Materials Science</searchLink>. 10/6/2026, Vol. 223 Issue 19, p1-14. 14p. – Name: Subject Label: Subject Terms Group: Su Data: *<searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br />*<searchLink fieldCode="DE" term="%22Bilayers+%28Solid+state+physics%29%22">Bilayers (Solid state physics)</searchLink><br />*<searchLink fieldCode="DE" term="%22Charge+carrier+mobility%22">Charge carrier mobility</searchLink><br />*<searchLink fieldCode="DE" term="%22Amorphous+semiconductors%22">Amorphous semiconductors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This paper systematically summarizes the recent advances in modifying multicomponent amorphous oxide semiconductors (AOS) to enhance the overall performance of thin‐film transistors (TFTs), focusing primarily on field‐effect mobility and operational stability against bias and illumination stress. Two mainstream strategies—single‐layer modification and bilayer structure design—were reviewed. The mechanisms of these strategies for influencing TFT characteristics were discussed in detail by examining unmodified versus modified single‐layer oxides and single‐layer versus bilayer oxides under consistent fabrication and testing conditions. This comparative approach minimizes cross‐study deviations. Finally, the applicable scenarios for AOS TFTs were clarified by evaluating the current status of performance (with an emphasis on mobility and negative bias illumination stress stability) achieved through those two modification approaches. [ABSTRACT FROM AUTHOR] |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/pssa.70527 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 1 Subjects: – SubjectFull: Thin film transistors Type: general – SubjectFull: Bilayers (Solid state physics) Type: general – SubjectFull: Charge carrier mobility Type: general – SubjectFull: Amorphous semiconductors Type: general Titles: – TitleFull: Advances in Optimization Strategies of Multicomponent Amorphous Oxide Semiconductors for Thin‐Film Transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Yuyun – PersonEntity: Name: NameFull: Xu, Guodong – PersonEntity: Name: NameFull: Chen, Yuanming – PersonEntity: Name: NameFull: Wu, Weijing – PersonEntity: Name: NameFull: Yao, Ruohe – PersonEntity: Name: NameFull: Shen, Yi IsPartOfRelationships: – BibEntity: Dates: – D: 06 M: 10 Text: 10/6/2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 18626300 Numbering: – Type: volume Value: 223 – Type: issue Value: 19 Titles: – TitleFull: Physica Status Solidi. A: Applications & Materials Science Type: main |
| ResultId | 1 |