Academic Journal
Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique.
| Τίτλος: | Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique. |
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| Συγγραφείς: | Petluru, P.1 pnpetlu@sandia.gov, Webster, P. T.2, Hawkins, S. D.1, Muhowski, A. J.1 |
| Πηγή: | Applied Physics Letters. 7/27/2026, Vol. 129 Issue 4, p1-5. 5p. |
| Θεματικοί όροι: | *Phase shift (Nuclear physics), *Excess carriers (Solid state physics), *Photoluminescence, *Superlattices, *Data analysis |
| Περίληψη: | An optical phase-shift technique is demonstrated to measure the carrier lifetime of an InGaAs/GaAsSb type-II superlattice as a function of excess carrier density, showing good agreement with time-resolved photoluminescence data at low excitation. At 77 K, the minority-carrier lifetime is 369 ns. [ABSTRACT FROM AUTHOR] |
| Βάση Δεδομένων: | Academic Search Index |
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