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Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique.

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Τίτλος: Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique.
Συγγραφείς: Petluru, P.1 pnpetlu@sandia.gov, Webster, P. T.2, Hawkins, S. D.1, Muhowski, A. J.1
Πηγή: Applied Physics Letters. 7/27/2026, Vol. 129 Issue 4, p1-5. 5p.
Θεματικοί όροι: *Phase shift (Nuclear physics), *Excess carriers (Solid state physics), *Photoluminescence, *Superlattices, *Data analysis
Περίληψη: An optical phase-shift technique is demonstrated to measure the carrier lifetime of an InGaAs/GaAsSb type-II superlattice as a function of excess carrier density, showing good agreement with time-resolved photoluminescence data at low excitation. At 77 K, the minority-carrier lifetime is 369 ns. [ABSTRACT FROM AUTHOR]
Βάση Δεδομένων: Academic Search Index
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  Data: Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>. 7/27/2026, Vol. 129 Issue 4, p1-5. 5p.
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  Data: An optical phase-shift technique is demonstrated to measure the carrier lifetime of an InGaAs/GaAsSb type-II superlattice as a function of excess carrier density, showing good agreement with time-resolved photoluminescence data at low excitation. At 77 K, the minority-carrier lifetime is 369 ns. [ABSTRACT FROM AUTHOR]
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        Value: 10.1063/5.0342423
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        Text: English
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      – SubjectFull: Excess carriers (Solid state physics)
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      – SubjectFull: Photoluminescence
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      – SubjectFull: Superlattices
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      – SubjectFull: Data analysis
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      – TitleFull: Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique.
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              Text: 7/27/2026
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              Y: 2026
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