Academic Journal
Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth.
| Title: | Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth. |
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| Authors: | Shao, Pengfei1 pfshao@nju.edu.cn, Liu, Yu1, Yao, Qi1, Liu, Dawei1, Cao, Lei1, Cai, Qing1, Lin, Tsung-Tse2, Yamaguchi, Tomohiro3, Araki, Tsutomu4, Liu, Bin1, Zhang, Rong1, Nanishi, Yasushi4, Wang, Ke1 kewang@nju.edu.cn |
| Source: | Applied Physics Letters. 3/16/2026, Vol. 128 Issue 11, p1-7. 7p. |
| Subject Terms: | *Indium gallium nitride, *Bilayers (Solid state physics), *Kinetic energy, *Molecular beam epitaxy, *Electron diffraction |
| Abstract: | The presence of a bilayer of metal atoms on the growth front is critical for achieving high-quality III-nitride growth via molecular beam epitaxy. To investigate the kinetics of bilayer indium (In) atoms on the (In)GaN surface, we conducted real-time monitoring of In adsorption and desorption processes using in situ laser reflection and reflected high-energy electron diffraction. In situ monitoring using both techniques has demonstrated complementary information on the growth front. In adsorption and deposition processes exhibit two equilibrium states corresponding to the first and second monolayer coverages. For high In beam flux, In droplets will easily form, which serve as a reservoir, requiring extra time for desorption. In contrast, for very low In beam flux, only the first monolayer coverage can be held on the surface. By optimizing the In supply and substrate temperature, two monolayers of In coverage can be formed on the (In)GaN. High-quality InGaN films with smooth atomic steps are obtained because the deposition of two In monolayers on the growth front under slightly In-rich conditions enhances lateral atomic diffusion, resulting in a smoother surface morphology. [ABSTRACT FROM AUTHOR] |
| Database: | Academic Search Index |
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| Items | – Name: Title Label: Title Group: Ti Data: Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Shao%2C+Pengfei%22">Shao, Pengfei</searchLink><relatesTo>1</relatesTo><i> pfshao@nju.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Yu%22">Liu, Yu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yao%2C+Qi%22">Yao, Qi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+Dawei%22">Liu, Dawei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Cao%2C+Lei%22">Cao, Lei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Cai%2C+Qing%22">Cai, Qing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lin%2C+Tsung-Tse%22">Lin, Tsung-Tse</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Yamaguchi%2C+Tomohiro%22">Yamaguchi, Tomohiro</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Araki%2C+Tsutomu%22">Araki, Tsutomu</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+Bin%22">Liu, Bin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Rong%22">Zhang, Rong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Nanishi%2C+Yasushi%22">Nanishi, Yasushi</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Ke%22">Wang, Ke</searchLink><relatesTo>1</relatesTo><i> kewang@nju.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>. 3/16/2026, Vol. 128 Issue 11, p1-7. 7p. – Name: Subject Label: Subject Terms Group: Su Data: *<searchLink fieldCode="DE" term="%22Indium+gallium+nitride%22">Indium gallium nitride</searchLink><br />*<searchLink fieldCode="DE" term="%22Bilayers+%28Solid+state+physics%29%22">Bilayers (Solid state physics)</searchLink><br />*<searchLink fieldCode="DE" term="%22Kinetic+energy%22">Kinetic energy</searchLink><br />*<searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br />*<searchLink fieldCode="DE" term="%22Electron+diffraction%22">Electron diffraction</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The presence of a bilayer of metal atoms on the growth front is critical for achieving high-quality III-nitride growth via molecular beam epitaxy. To investigate the kinetics of bilayer indium (In) atoms on the (In)GaN surface, we conducted real-time monitoring of In adsorption and desorption processes using in situ laser reflection and reflected high-energy electron diffraction. In situ monitoring using both techniques has demonstrated complementary information on the growth front. In adsorption and deposition processes exhibit two equilibrium states corresponding to the first and second monolayer coverages. For high In beam flux, In droplets will easily form, which serve as a reservoir, requiring extra time for desorption. In contrast, for very low In beam flux, only the first monolayer coverage can be held on the surface. By optimizing the In supply and substrate temperature, two monolayers of In coverage can be formed on the (In)GaN. High-quality InGaN films with smooth atomic steps are obtained because the deposition of two In monolayers on the growth front under slightly In-rich conditions enhances lateral atomic diffusion, resulting in a smoother surface morphology. [ABSTRACT FROM AUTHOR] |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/5.0314880 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1 Subjects: – SubjectFull: Indium gallium nitride Type: general – SubjectFull: Bilayers (Solid state physics) Type: general – SubjectFull: Kinetic energy Type: general – SubjectFull: Molecular beam epitaxy Type: general – SubjectFull: Electron diffraction Type: general Titles: – TitleFull: Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Shao, Pengfei – PersonEntity: Name: NameFull: Liu, Yu – PersonEntity: Name: NameFull: Yao, Qi – PersonEntity: Name: NameFull: Liu, Dawei – PersonEntity: Name: NameFull: Cao, Lei – PersonEntity: Name: NameFull: Cai, Qing – PersonEntity: Name: NameFull: Lin, Tsung-Tse – PersonEntity: Name: NameFull: Yamaguchi, Tomohiro – PersonEntity: Name: NameFull: Araki, Tsutomu – PersonEntity: Name: NameFull: Liu, Bin – PersonEntity: Name: NameFull: Zhang, Rong – PersonEntity: Name: NameFull: Nanishi, Yasushi – PersonEntity: Name: NameFull: Wang, Ke IsPartOfRelationships: – BibEntity: Dates: – D: 16 M: 03 Text: 3/16/2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 128 – Type: issue Value: 11 Titles: – TitleFull: Applied Physics Letters Type: main |
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