A Monolithic 5.7 A/mm2 91% Peak Efficiency Scalable Multistage Modular Switched Capacitor Voltage Regulator for Base Die Vertical Power Delivery in 3D-ICs

Συγγραφείς: Xiaosen Liu, Jingshu Yu, Minxiang Gong, Nicolas Butzen, Sheldon Weng, Harish K. Krishnamurthy, Krishnan Ravichandran, Ramez Hosseinian Ahangharnejhad, James Waldemer, Christopher Pelto, James W. Tschanz, Vivek De

Πηγή: IEEE Journal of Solid-State Circuits. 60:1265-1276

A 96.1% Peak Efficiency, 6.8 kW/in3, 48V-to-6V On-package Intermediate Bus Converter with LV-GaN Power Transistors

Συγγραφείς: Mausamjeet Khatua, Nachiket Desai, Harish Krishnamurthy, Sheldon Weng, Jingshu Yu, Huong Do, Samuel Bader, Han Wui Then, Krishnan Ravichandran, James Tschanz, Kaladhar Radhakrishnan, Vivek De

Πηγή: 2025 IEEE Applied Power Electronics Conference and Exposition (APEC). :1681-1686

A Monolithic, 10.5 W/mm2, 600 MHz Top-Metal and C4 Planar Spiral Inductor-Based Integrated Buck Voltage Regulator on 16 nm Class

Συγγραφείς: Suhwan Kim 0002, Harish K. Krishnamurthy, Zakir K. Ahmed 0001, Nachiket V. Desai, Sheldon Weng, Anne Augustine, Huong T. Do, Jingshu Yu, Phong D. Bach, Xiaosen Liu, Kaladhar Radhakrishnan, Krishnan Ravichandran, James W. Tschanz, Vivek De

Πηγή: IEEE Journal of Solid-State Circuits. 60:75-84

A Monolithic 12.7 W/mm2, 92% Peak-Efficiency Switched-Capacitor DC-DC Converter Using CSCR-First Topology

Συγγραφείς: Nicolas Butzen, Harish K. Krishnamurthy, Jingshu Yu, Zakir K. Ahmed 0001, Sheldon Weng, Krishnan Ravichandran, Ramez Hosseinian Ahangharnejhad, James Waldemer, Christopher Pelto, James W. Tschanz

Πηγή: IEEE Journal of Solid-State Circuits. 59:4114-4123

14.9 A Monolithic 10.5W/mm2600 MHz Top-Metal and C4 Planar Spiral Inductor-Based Integrated Buck Voltage Regulator on 16nm-Class CMOS

Συγγραφείς: Suhwan Kim 0002, Harish K. Krishnamurthy, Zakir K. Ahmed 0001, Nachiket V. Desai, Sheldon Weng, Anne Augustine, Huong T. Do, Jingshu Yu, Phong D. Bach, Xiaosen Liu, Kaladhar Radhakrishnan, Krishnan Ravichandran, James W. Tschanz, Vivek De

Πηγή: 2024 IEEE International Solid-State Circuits Conference (ISSCC). :270-272

28.4 A Monolithic 12.7W/mm2 Pmax, 92% Peak-Efficiency CSCR-First Switched-Capacitor DC-DC Converter

Συγγραφείς: Nicolas Butzen, Harish Krishnamurthy, Jingshu Yu, Zakir K. Ahmed 0001, Sheldon Weng, Krishnan Ravichandran, Ramez Hosseinian Ahangharnejhad, James Waldemer, Chris Pelto, James W. Tschanz

Πηγή: 2024 IEEE International Solid-State Circuits Conference (ISSCC). :462-464

A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN nMOS Power Transistors

Συγγραφείς: Nachiket V. Desai, Han Wui Then, Jingshu Yu, Harish K. Krishnamurthy, William J. Lambert, Nicolas Butzen, Sheldon Weng, Christopher Schaef, Kaladhar Radhakrishnan, Krishnan Ravichandran, James W. Tschanz, Vivek De

Πηγή: IEEE Journal of Solid-State Circuits. 57:1090-1099

Θεματικοί όροι: 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology

A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression

Συγγραφείς: Wei Jia Zhang, Jingshu Yu, Wen Tao Cui, Yahui Leng, Jingyuan Liang, Yuan-Ta Hsieh, Hann-Huei Tsai, Ying-Zong Juang, Wen-Kuan Yeh, Wai Tung Ng

Πηγή: IEEE Transactions on Power Electronics. 36:14119-14132

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 01 natural sciences

A Monolithic 5.7A/mm2 91% Peak Efficiency Scalable Multi-Stage Modular Switched Capacitor Voltage Regulator with Self-Timed Deadtime and Safe Startup for 3D-ICs

Συγγραφείς: Jingshu Yu, Xiaosen Liu, Minxiang Gong, Nicolas Butzen, Sheldon Weng, Harish K. Krishnamurthy, Krishnan Ravichandran, Ramez Hosseinian Ahangharnejhad, Jim Waldemer, Christopher Pelto, James W. Tschanz, Vivek De

Πηγή: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). :1-2

A 92%-Efficiency 0.828μs Settling Time FC5L Voltage Regulator Featuring Time-Domain Charge Balancing & Flying Capacitor Self-Switching for Wide Dynamic Range & Fast Transient Chiplet Applications

Συγγραφείς: Xichen Sun, Jingshu Yu, Xuliang Wang, Jin Wei, Junmin Jiang, Chenchang Zhan, Yan Wang 0023, Xiaosen Liu

Πηγή: 2024 IEEE Custom Integrated Circuits Conference (CICC). :1-2

Smart Gate Driver ICs for GaN Power Transistors

Συγγραφείς: Wei Jia Zhang, Jingshu Yu, Wai Tung Ng

Πηγή: 2019 IEEE 13th International Conference on ASIC (ASICON). :1-4

Θεματικοί όροι: 0103 physical sciences, 7. Clean energy, 01 natural sciences

A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control

Συγγραφείς: Wei Jia Zhang, Jingshu Yu, Yahui Leng, Wen Tao Cui, Gao Qiang Deng, Wai Tung Ng

Πηγή: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). :102-105

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 01 natural sciences

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Συγγραφείς: Namjee Kim, Jingshu Yu, Weijia Zhang, Rophina Li, Mengqi Wang, Wai Tung Ng

Πηγή: Journal of Electronic Materials. 49:6829-6843

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Συγγραφείς: Wei Jia Zhang, Yahui Leng, Jingshu Yu, Xiaoxue Jiang, ChuYao Cheng, Wai Tung Ng

Πηγή: IET Power Electronics. 12:3928-3935

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 01 natural sciences

An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction Detection

Συγγραφείς: Wei Jia Zhang, Yahui Leng, Jingshu Yu, Yu Shen Lu, Chu Yao Cheng, Wai Tung Ng

Πηγή: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). :83-86

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 01 natural sciences

A Smart IGBT Gate Driver IC With Temperature Compensated Collector Current Sensing

Συγγραφείς: Jingxuan Chen, Wei Jia Zhang, Andrew Shorten, Jingshu Yu, Masahiro Sasaki, Tetsuya Kawashima, Haruhiko Nishio, Wai Tung Ng

Πηγή: IEEE Transactions on Power Electronics. 34:4613-4627

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

Συγγραφείς: Wai Tung Ng, Jingshu Yu, Mengqi Wang, Rophina Li, Weijia Zhang

Πηγή: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). :1-4

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences

A smart gate driver IC for GaN power transistors

Συγγραφείς: Jingshu Yu, Wei Jia Zhang, Andrew. Shorten, Rophina Li, Wai Tung Ng

Πηγή: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). :84-87

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 01 natural sciences, 7. Clean energy

A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors

Συγγραφείς: Nachiket V. Desai, Harish K. Krishnamurthy, William J. Lambert, Jingshu Yu, Han Wui Then, Nicolas Butzen, Sheldon Weng, Christopher Schaef, N. Nidhi, Marko Radosavljevic, Johann Rode, Justin Sandford, Kaladhar Radhakrishnan, Krishnan Ravichandran, Bernhard Sell, James W. Tschanz, Vivek De

Πηγή: 2021 Symposium on VLSI Circuits. :1-2

Θεματικοί όροι: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences

Achieving enhanced strength-ductility synergy in ZTC4 titanium alloy through hot oscillatory forging

Συγγραφείς: Dejian Sun, Han Zhang, Mengwei Yang, Jingshu Yuan, Yuyang Yuan, Tianzi Wang, Yang Gao, Lei Fan, Xiaoqin Guo, Linan An

Πηγή: Journal of Materials Research and Technology, Vol 36, Iss , Pp 3319-3326 (2025)

Θεματικοί όροι: Titanium alloy, Hot oscillatory forging, Microstructure, Mechanical property, Mining engineering. Metallurgy, TN1-997

Περιγραφή αρχείου: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2238785425008464; https://doaj.org/toc/2238-7854

Σύνδεσμος πρόσβασης: https://doaj.org/article/72c34ed67a664c76854e99256ee28f7c