High-temperature memristors enabled by interfacial engineering.

Συγγραφείς: Zhao, Jian¹ (AUTHOR), Jorgensen, Cameron S.² (AUTHOR), Mahalingam, Krishnamurthy² (AUTHOR), Bowers, Cynthia² (AUTHOR), Sugimoto, Wataru³ (AUTHOR), Ito, Kai³ (AUTHOR), Kim, Seung Ju¹ (AUTHOR), Zhao, Ruoyu¹ (AUTHOR), Xu, Yichun¹ (AUTHOR), Liao, Han-Ting¹ (AUTHOR), Kalia, Rajiv K.⁴ (AUTHOR), Nakano, Aiichiro⁴ (AUTHOR), Shimamura, Kohei³ (AUTHOR), Shimojo, Fuyuki³ (AUTHOR), Vashishta, Priya⁴ (AUTHOR), Roy, Ajit K.² (AUTHOR), Ge, Ning⁵ (AUTHOR), Hu, Miao⁵ (AUTHOR), Williams, R. Stanley¹ (AUTHOR), Xia, Qiangfei^5,6 (AUTHOR)

Πηγή: Science. 5/14/2026, Vol. 392 Issue 6799, p771-779. 9p.

Θεματικοί όροι: *Memristors, *High temperature electronics, *Surfaces (Technology), *Tungsten, *Nonvolatile memory, *Thermal stability, *Hafnium oxide, *Graphene

Integrated Motor Drives: A Review of Recent Developments, Enabling Technologies, and Future Research Directions

Συγγραφείς: Deng, X., Mecrow, B., Jahns, T.M., Empringham, L., Lillo, L.d., Simpson, N., Hopkins, A.

Πηγή: IEEE Journal of Emerging and Selected Topics in Power Electronics IEEE J. Emerg. Sel. Topics Power Electron. Emerging and Selected Topics in Power Electronics, IEEE Journal of. 14(4):4151-4171 Aug, 2026

Extreme High-Temperature Evaluation of Printed Platinum Materials for Aerospace Applications

Συγγραφείς: Obeidat, Abdullah S., Alshaibani, W T, Busse, Erik, Shamsian, Olya Noruz, Mahjouri-Samani, Masoud, Gonya, Stephen, Pavinatto, Felippe, Poliks, Mark D.

Πηγή: 2026 IEEE 76th Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2026 IEEE 76th. :1448-1454 May, 2026

Relation: 2026 IEEE 76th Electronic Components and Technology Conference (ECTC)

SiC FETs for High‐Power and High‐Temperature Electronics

Πηγή: The FET Centennial. Sep 09, 2026

Demonstration of 500 °C RF performance in AlGaN/GaN MISHEMTs with Pt/Au gates.

Συγγραφείς: Bai, Ruixin¹ (AUTHOR) rbai33@wisc.edu, Sarker, Biddut K² (AUTHOR), Duncan, Leonard A² (AUTHOR), Mukhopadhyay, Swarnav¹ (AUTHOR), Chen, Jiahao¹ (AUTHOR), Li, Chenglong¹ (AUTHOR), Pasayat, Shubhra S¹ (AUTHOR), Green, Andrew J³ (AUTHOR), Islam, Ahmad E³ (AUTHOR), Gupta, Chirag¹ (AUTHOR)

Πηγή: Semiconductor Science & Technology. 2026, Vol. 41 Issue 10, p1-8. 8p.

Θεματικοί όροι: *High temperature electronics, *Modulation-doped field-effect transistors, *Frequencies of oscillating systems, *Thermal stability

800 °C open-air electrical characterization of III-N HEMTs using rapid dual-frequency extraction.

Συγγραφείς: Liu, Zihuan¹ (AUTHOR) zihuanliu@utexas.edu, Wang, Yen-Chen¹ (AUTHOR), Thurston, Matti² (AUTHOR), Chowdhury, Srabanti² (AUTHOR), Lu, Ruochen¹ (AUTHOR), Hall, Neal¹ (AUTHOR) nahall@utexas.edu

Πηγή: APL Electronic Devices. Sep2026, Vol. 2 Issue 3, p1-10. 10p.

Θεματικοί όροι: *High temperature electronics, *Extreme environments, *Modulation-doped field-effect transistors

Εταιρία/Οντότητα: United States. Defense Advanced Research Projects Agency

Robust 800 K operation of AlInN/GaN HEMTs enabled by O2-based supercritical fluid treatment.

Συγγραφείς: Lu, Yu-Hsuan¹ (AUTHOR), Kuo, Chuan-Wei² (AUTHOR), Lin, Ye³ (AUTHOR), Kuo, Ting-Tzu⁴ (AUTHOR), Kumar, Mukul⁵ (AUTHOR), Xu, Xiaotong³ (AUTHOR), Zhu, Wenjuan³ (AUTHOR), Chang, Ting-Chang⁶ (AUTHOR), Wu, Chao-Hsin^1,5,7 (AUTHOR) chaohsinwu@ntu.edu.tw

Πηγή: APL Electronic Devices. Sep2026, Vol. 2 Issue 3, p1-6. 6p.

Θεματικοί όροι: *Supercritical fluids, *High temperature electronics, *High temperatures, *Surface passivation

Design Tradeoffs of Through-Silicon-Carbide Vias for High-Temperature 3D SiC IC Integration

Συγγραφείς: Thota, Sahithi, Song, Li, Li, Feng

Πηγή: 2026 IEEE Workshop on Microelectronics and Electron Devices (WMED) Microelectronics and Electron Devices (WMED), 2026 IEEE Workshop on. :10-13 Apr, 2026

Relation: 2026 IEEE Workshop on Microelectronics and Electron Devices (WMED)

CMOS Operational Amplifier Based on a Differential Dual-Input-Stage Class with Low Self-Heat Dissipation

Συγγραφείς: Kleimenkin, Dmitriy V., Frolov, Ilya V., Prokopenko, Nikolay N.

Πηγή: 2025 IEEE XVII International Scientific and Technical Conference on Actual Problems of Electronic Instrument Engineering (APEIE) Actual Problems of Electronic Instrument Engineering (APEIE), 2025 IEEE XVII International Scientific and Technical Conference on. :1-4 Nov, 2025

Relation: 2025 IEEE XVII International Scientific and Technical Conference on Actual Problems of Electronic Instrument Engineering (APEIE)

Gallium-Arsenide Operational Amplifier for High Temperature Applications without Current Mirrors

Συγγραφείς: Sergeenko, Marsel A., Kleimenkin, Dmitriy V., Prokopenko, Nikolay N.

Πηγή: 2025 IEEE XVII International Scientific and Technical Conference on Actual Problems of Electronic Instrument Engineering (APEIE) Actual Problems of Electronic Instrument Engineering (APEIE), 2025 IEEE XVII International Scientific and Technical Conference on. :1-4 Nov, 2025

Relation: 2025 IEEE XVII International Scientific and Technical Conference on Actual Problems of Electronic Instrument Engineering (APEIE)

Development of a High-Frequency, High-Temperature Class-A Amplifier Based on a Silicon Carbide Static Induction Transistor.

Συγγραφείς: Scardelletti, Maximilian C.¹ (AUTHOR) maximilian.c.scardelletti@nasa.gov, Grgat, Jonathon R.² (AUTHOR), Zorman, Christian A.^1,2 (AUTHOR)

Πηγή: Sensors (14248220). Jun2026, Vol. 26 Issue 12, p3646. 18p.

Θεματικοί όροι: *Silicon carbide, *High temperature electronics, *Signal-to-noise ratio, *Electronic circuit design, *Broadband amplifiers, *Electronic amplifiers

AlN Transistors for Ultrahightemperature Electronics.

Συγγραφείς: Hiroki, Masanobu¹, Hirama, Kazuyuki², Taniyasu, Yoshitaka³

Πηγή: NTT Technical Review. Jun2026, Vol. 24 Issue 6, p21-26. 6p.

Θεματικοί όροι: *Aluminum nitride, *High temperature electronics, *High temperatures, *Metal semiconductor field-effect transistors, *Semiconductor materials

Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions

Συγγραφείς: Eisner, S.R., Heussen, Z.N., Cordero, S., Niroula, J., Naphy, J., Isamotu, M.F., Surdi, H., Yuan, M., Xie, Q., Nemanich, R.J., Palacios, T., Rais-Zadeh, M., Hunter, G.W., Senesky, D.G.

Πηγή: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(12):6610-6617 Dec, 2025

12-bit Delta-Sigma ADC Operating at a Temperature of Up to 250 °C in Standard 0.18 μm SOI CMOS

Συγγραφείς: Sbrana, C., Catania, A., Toschi, T., Strangio, S., Iannaccone, G.

Πηγή: IEEE Transactions on Circuits and Systems I: Regular Papers IEEE Trans. Circuits Syst. I Circuits and Systems I: Regular Papers, IEEE Transactions on. 72(12):7578-7587 Dec, 2025

Unveiling state-specific total-exchange dynamics in high-temperature N2–N2/N2–O2 collisions via QCT and neural-network modeling.

Συγγραφείς: Hu, Yong-Xin¹, Guo, Chang-Min^1,2 changminguo@qq.com, Ma, Jian-Yi¹ changminguo@qq.com

Πηγή: Journal of Chemical Physics. 3/28/2026, Vol. 164 Issue 12, p1-16. 16p.

Θεματικοί όροι: *High temperature electronics, *Microscopy, *Impact (Mechanics), *Ground state (Quantum mechanics), *Energy transfer

Direct Digital Manufacturing for Laser-Drilled Vias in Multilayer Glass Printed Circuit Structures

Συγγραφείς: Gray, Bryce, Benoit, Jason, LeBlanc, Sam, Sookdeo, Lance, Martinez, Cameron, Rojas, Eduardo, Church, Kenneth

Πηγή: 2025 IEEE 75th Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2025 IEEE 75th. :1181-1186 May, 2025

Relation: 2025 IEEE 75th Electronic Components and Technology Conference (ECTC)

GaAs Op-Amplifier With Class AB Output Stage on p-n-p Bipolar and nJFets

Συγγραφείς: Kleimenkin, Dmitriy V., Frolov, Ilya V., Chumakov, Vladislav E., Bugakova, Anna V.

Πηγή: 2025 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF) Wave Electronics and its Application in Information and Telecommunication Systems (WECONF), 2025. :1-5 May, 2025

Relation: 2025 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF)

Gallium Arsenide Operational Amplifier with Two High-Impedance Nodes for High-Temperature Applications

Συγγραφείς: Sergeenko, Marsel A., Chumakov, Vladislav E., Prokopenko, Nikolay N., Kleimenkin, Dmitriy V.

Πηγή: 2025 International Conference on Electrical Engineering and Photonics (EExPolytech) Electrical Engineering and Photonics (EExPolytech), 2025 International Conference on. :45-47 Oct, 2025

Relation: 2025 International Conference on Electrical Engineering and Photonics (EExPolytech)

Study of Temperature Dependence and Performance Metrics on GaN Amplifier Designs up to 300°C

Συγγραφείς: Shiyanbola, Joseph, Xie, Zhijian

Πηγή: SoutheastCon 2025 2025, SoutheastCon. :285-290 Mar, 2025

Relation: SoutheastCon 2025

High-Temperature 13-Bit Delta-Sigma ADC in Standard SOI CMOS Operating Up to 260°C

Συγγραφείς: Sbrana, Christian, Catania, Alessandro, Toschi, Tommaso, Strangio, Sebastiano, Iannaccone, Giuseppe

Πηγή: 2024 31st IEEE International Conference on Electronics, Circuits and Systems (ICECS) Electronics, Circuits and Systems (ICECS), 2024 31st IEEE International Conference on. :1-4 Nov, 2024

Relation: 2024 31st IEEE International Conference on Electronics, Circuits and Systems (ICECS)