Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons

Authors: S N Kolgatin, A E Vasiliev, V V Kozlovski

Source: St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 13, Iss 3 (2020)

Subject Terms: radiative energy losses, Physics, QC1-999, электронно-дырочная пара, graphene, германий, silicon, 02 engineering and technology, electron accelerator, 01 natural sciences, relativistic electron, релятивистский электрон, графен, 0104 chemical sciences, кремний, потенциал ионизации, ускоритель электронов, germanium, тормозные потери энергии, QA1-939, ionization potential, 0204 chemical engineering, Mathematics, electron-hole pair

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https://cyberleninka.ru/article/n/contribution-of-internal-ionization-processes-in-semiconductors-to-radiative-losses-of-relativistic-electrons
https://doaj.org/article/e00815046f0043baa73fd1b5ec1a6305