Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

Authors: Vyacheslav Timofeev, Vladimir Mashanov, Alexander Nikiforov, Ilya Skvortsov, Tatyana Gavrilova, Dmitry Gulyaev, Anton Gutakovskii, Igor Chetyrin

Source: AIP Advances, Vol 10, Iss 1, Pp 015309-015309-7 (2020)
AIP Advances. 2020. Vol. 10, № 1. P. 015309-1-015309-7

Subject Terms: энергодисперсионная рентгеновская спектроскопия, бездислокационные наноструктуры, фотоэлектронная спектроскопия, Physics, QC1-999, олово, 02 engineering and technology, 0210 nano-technology, просвечивающая электронная микроскопия

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Access URL: https://aip.scitation.org/doi/pdf/10.1063/1.5139936
https://doaj.org/article/6463dcc497a844de888e4c1a0ef99ce7
https://doaj.org/article/6463dcc497a844de888e4c1a0ef99ce7
http://ui.adsabs.harvard.edu/abs/2020AIPA...10a5309T/abstract
https://aip.scitation.org/doi/10.1063/1.5139936
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000792278