Εμφανίζονται 1 - 20 Αποτελέσματα από 65 για την αναζήτηση '"СКАНИРУЮЩАЯ ТУННЕЛЬНАЯ МИКРОСКОПИЯ"', χρόνος αναζήτησης: 0,83δλ Περιορισμός αποτελεσμάτων
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    Academic Journal

    Συνεισφορές: Saint-Lager, Marie-Claire, Surfaces, Interfaces et Nanostructures (NEEL - SIN), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS), Laboratory for Catalytic Research, Tomsk State University Tomsk, Epitaxie et couches minces (NEEL- EpiCM), Nanostructures et Rayonnement Synchrotron (NRS), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

    Πηγή: The Journal of Physical Chemistry C. 2018. Vol. 122, № 39. P. 22588-22596

    Συνδεδεμένο Πλήρες Κείμενο
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    Academic Journal

    Συνεισφορές: German Research Foundation, Ministerio de Ciencia e Innovación (España), Universidad del País Vasco, Ministerio de Economía y Competitividad (España), Tomsk State University, Ministry of Education and Science of the Russian Federation, Saint Petersburg State University, German-Russian Interdisciplinary Science Center, German Academic Exchange Service, Helmholtz-Zentrum Berlin for Materials and Energy, Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]

    Πηγή: Digital.CSIC. Repositorio Institucional del CSIC
    instname
    Consejo Superior de Investigaciones Científicas (CSIC)
    Nano Letters
    Nano letters. 2018. Vol. 18, № 3. P. 1564-1574

    Περιγραφή αρχείου: application/pdf

    Συνδεδεμένο Πλήρες Κείμενο
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    Conference

    Περιγραφή αρχείου: application/pdf

    Relation: XXII международная научно-техническая Уральская школа-семинар металловедов-молодых ученых. — Екатеринбург, 2023; http://elar.urfu.ru/handle/10995/128864

    Διαθεσιμότητα: http://elar.urfu.ru/handle/10995/128864

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    Academic Journal

    Πηγή: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering; Том 20, № 1 (2017); 38-44 ; Известия высших учебных заведений. Материалы электронной техники; Том 20, № 1 (2017); 38-44 ; 2413-6387 ; 1609-3577 ; 10.17073/1609-3577-2017-1

    Περιγραφή αρχείου: application/pdf

    Relation: https://met.misis.ru/jour/article/view/244/211; Soref R. A., Perry C. H. Predirect bandgap of the new semiconductor SiGeSn // J. Appl. Phys. − 1991. − V. 69, N 1. − P. 539—541. DOI:10.1063/1.347704; Moontragoon P., Ikonić Z., Harrison P. Band structure calculation of Si—Ge—Sn alloys: achieving direct bandgap materials // Semicond. Sci. Technol. − 2007. − V. 22, N 7. − P. 742—748. DOI:10.1088/0268−1242/22/7/012; Du W., Ghetmiri S. A., Conley B. R., Mosleh A., Nazzal A., Soref R. A., Sun G., Tolle J., Margetis J., Naseem H. A., Yu S.−Q. Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx // Appl. Phys. Lett. − 2014. − V. 105, N 5. − P. 051104−1—4. DOI:10.1063/1.4892302; Senaratne C. L., Gallagher J. D., Aoki T., Kouvetakis J., Menéndez J. Advances in light emission from group−IV alloys via lattice engineering and n−type doping based on custom−designed chemistries // Chem. Mater. − 2014. − V. 26, N 20. − P. 6033—6041. 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DOI:10.1039/c6cc04242b; Wirths S., Tiedemann A. T., Ikonic Z., Harrison P., Holländer B., Stoica T., Mussler G., Myronov M., Hartmann J. M., Grützmacher D., Buca D., Mantl S. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors // Appl. Phys. Lett. − 2013. − V. 102, N 19. − P. 192103−1—4. DOI:10.1063/1.4805034; von den Driesch N., Stange D., Wirths S., Mussler G., Holländer B., Ikonic Z., Hartmann J. M., Stoica T., Mantl S., Grützmacher D., Buca D. Direct bandgap group IV epitaxy on Si for laser applications // Chem. Mater. − 2015. − V. 27, N 13. − P. 4693—4702. DOI:10.1021/acs.chemmater.5b01327; Kato K., Asano T., Taoka N., Sakashita M., Takeuchi W., Nakatsuka O., Zaima S. Robustness of Sn precipitation during thermal oxidation of Ge1−xSnx on Ge(001) // Jpn. J. Appl. Phys. − 2014. − V. 53, N 8S1. − P. 08LD04−1—8. DOI:10.7567/JJAP.53.08LD04; Taoka N., Asano T., Yamaha T., Terashima T., Nakatsuka O., Costina I., Zaumseil P., Capellini G., Zaima S., Schroeder T. Non− uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation // Appl. Phys. Lett. − 2015. − V. 106, N 6. − P. 061107−1—5. DOI:10.1063/1.4908121; van de Walle C. G. Band lineups and deformation potentials in the model−solid theory // Phys. Rev. B. − 1989. − V. 39, N 3. − P. 1871—1883. DOI:10.1103/PhysRevB.39.1871; El Kurdi M., Sauvage S., Fishman G., Boucaud P. Band− edge alignment of SiGe/Si quantum wells and SiGe/Si self−assembled islands // Phys. Rev. B. − 2006. − V. 73, N 19. − P. 195327−1—9. DOI:10.1103/PhysRevB.73.195327; Jaros M. Simple analytic model for heterojunction band offsets // Phys. Rev. B. − 1988. − V. 37, N 12. − P. 7112—7114. DOI:10.1103/PhysRevB.37.7112; Moontragoon P., Soref R., Ikonic Z. The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications // J. Appl. Phys. − 2012. − V. 112, N 7. − P. 073106−1—8. DOI:10.1063/1.4757414; Fischer I. A., Wendav T., Augel L., Jitpakdeebodin S., Oliveira F., Benedetti A., Stefanov S., Chiussi S., Capellini G., Busch K., Schulze J. Growth and characterization of SiGeSn quantum well photodiodes // Optics Express. − 2015. − V. 23, N 19. − P. 25048—25057. DOI:10.1364/OE.23.025048; Attiaoui A., Moutanabbir O. Indirect−to−direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys // J. Appl. Phys. − 2014. − V. 116, N 6. − P. 063712−1—15. DOI:10.1063/1.4889926; Тимофеев В. А., Никифоров А. И., Туктамышев А. Р., Есин М. Ю., Машанов В. И., Гутаковский А. К., Байдакова Н. А. Напряженные многослойные структуры с псевдоморфными слоями GeSiSn // Физика и техника полупроводников. − 2016. − Т. 50, № 12. − С. 1610—1614.; Nikiforov A. I., Mashanov V. I., Timofeev V. A., Pchelyakov O. P., Cheng H.−H. Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth // Thin Solid Films. − 2014. − V. 557. − P. 188—191. DOI:10.1016/j. tsf.2013.11.128; https://met.misis.ru/jour/article/view/244

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    Academic Journal

    Συνεισφορές: Alexander von Humboldt Foundation, Ikerbasque Basque Foundation for Science, Томский государственный университет Физический факультет Кафедра физики металлов

    Πηγή: Digital.CSIC. Repositorio Institucional del CSIC
    Consejo Superior de Investigaciones Científicas (CSIC)
    instname
    Surface Science Reports. 2013. Vol. 68, № 3/4. P. 305-389

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    Συνδεδεμένο Πλήρες Κείμενο
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    Academic Journal

    Πηγή: Nanoscale Res Lett
    Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
    Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)

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