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1
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2Academic Journal
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3Dissertation/ Thesis
Authors: Panyavin, I. A.
Contributors: Вохминцев, А. С., Vokhmintsev, A. S., УрФУ. Физико-технологический институт, Кафедра физических методов и приборов контроля качества
Subject Terms: МЕМРИСТИВНАЯ СТРУКТУРА, TITANIUM DIOXIDE, МАГИСТЕРСКАЯ ДИССЕРТАЦИЯ, MASTER'S THESIS, ZIRCONIUM DIOXIDE, IMPEDANCE SPECTROSCOPY, ИМПЕДАНСНАЯ СПЕКТРОСКОПИЯ, RESISTIVE SWITCHING, РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, ЭКВИВАЛЕНТНАЯ СХЕМА, ДИОКСИД ЦИРКОНИЯ, MEMRISTIVE STRUCTURE, EQUIVALENT CIRCUIT, ДИОКСИД ТИТАНА
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Access URL: http://elar.urfu.ru/handle/10995/140684
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4Dissertation/ Thesis
Authors: Fedorov, D. D.
Contributors: Вохминцев, А. С., Vokhmintsev, A. S., УрФУ. Физико-технологический институт, Кафедра физических методов и приборов контроля качества
Subject Terms: СИНАПТИЧЕСКАЯ ПЛАСТИЧНОСТЬ, CONDUCTION MECHANISM, MEMRISTORS, TITANIUM DIOXIDE, МАГИСТЕРСКАЯ ДИССЕРТАЦИЯ, MASTER'S THESIS, МДМ-СТРУКТУРА, МЕХАНИЗМ ПРОВОДИМОСТИ, RESISTIVE SWITCHING, РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, SYNAPTIC PLASTICITY, АНОДИРОВАНИЕ, ANODIZING, МЕМРИСТОРЫ, MIM-STRUCTURE, ДИОКСИД ТИТАНА
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Access URL: http://elar.urfu.ru/handle/10995/140685
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5Academic Journal
Authors: A. M. Kislyuk, I. V. Kubasov, A. V. Turutin, A. A. Temirov, A. S. Shportenko, V. V. Kuts, M. D. Malinkovich, А. М. Кислюк, И. В. Кубасов, А. В. Турутин, А. А. Темиров, А. С. Шпортенко, В. В. Куц, М. Д. Малинкович
Contributors: The study was carried out with financial support from the Russian Science Foundation (grant No. https://rscf.ru/project/21-19-00872/)., Исследование выполнено за счет гранта Российского научного фонда № 21-19-00872, https://rscf.ru/project/21-19-00872/
Source: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering; Том 27, № 1 (2024); 35-55 ; Известия высших учебных заведений. Материалы электронной техники; Том 27, № 1 (2024); 35-55 ; 2413-6387 ; 1609-3577
Subject Terms: сегнетоэлектрические домены, charged domain wall, memristive effect, resistive switching, ferroelectric domains, заряженная доменная стенка, мемристивный эффект, резистивное переключение
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Three-dimensional ferroelectric domain visualization by Čerenkov-type second harmonic generation. Optics Express. 2010; 18(16): 16539. https://doi.org/10.1364/oe.18.016539; Kämpfe T., Reichenbach P., Schröder M., Haußmann A., Eng L. M., Woike T., Soergel E. Optical three-dimensional profiling of charged domain walls in ferroelectrics by Cherenkov second-harmonic generation. Physical Review B. Condensed Matter and Materials Physics. 2014; 89(3): 035314. https://doi.org/10.1103/PhysRevB.89.035314; Cherifi-Hertel S., Bulou H., Hertel R., Taupier G., Dorkenoo K.D.H., Andreas C., Guyonnet J., Gaponenko I., Gallo K., Paruch P. Non-ising and chiral ferroelectric domain walls revealed by nonlinear optical microscopy. Nature Communications. 2017; 8(1): 15768. https://doi.org/10.1038/ncomms15768; Irzhak D.V., Kokhanchik L.S., Punegov D.V., Roshchupkin D.V. Study of the specific features of lithium niobate crystals near the domain walls. Physics of the Solid State. 2009; 51(7): 1500—1502. https://doi.org/10.1134/s1063783409070452; Tikhonov Y., Maguire J.R., McCluskey C.J., McConville J.P.V., Kumar A., Lu H., Meier D., Razumnaya A., Gregg J.M., Gruverman A., Vinokur V.M., Luk’yanchuk I. Polarization topology at the nominally charged domain walls in uniaxial ferroelectrics. Advanced Materials. 2022; 34(45): 2203028. https://doi.org/10.1002/adma.202203028; Steffes J.J., Ristau R.A., Ramesh R., Huey B.D. Thickness scaling of ferroelectricity in BiFeO3 by tomographic atomic force microscopy. Proceedings of the National Academy of Sciences. 2019; 116(7): 2413—2418. https://doi.org/10.1073/pnas.1806074116; Alikin Y.M., Turygin A.P., Alikin D.O., Shur V.Y. Tilt control of the charged domain walls created by local switching on the non-polar cut of MgO doped lithium niobate single crystals. Ferroelectrics. 2021; 574(1): 16—22. https://doi.org/10.1080/00150193.2021.1888044; Eyben P., Bisiaux P., Schulze A., Nazir A., Vandervorst W. Fast fourier transform scanning spreading resistance microscopy: a novel technique to overcome the limitations of classical conductive AFM techniques. Nanotechnology. 2015; 26(35): 355702. https://doi.org/10.1088/0957-4484/26/35/355702; Shportenko A.S., Kislyuk A.M., Turutin A.V., Kubasov I.V., Malinkovich M.D., Parkhomenko Y.N. Effect of contact phenomena on the electrical conductivity of reduced lithium niobate. Modern Electronic Materials. 2021; 7(4): 167—175. https://doi.org/10.3897/j.moem.7.4.78569; Zhang W.J., Shen B.W., Fan H.C., Hu D., Jiang A.Q., Jiang J. Nonvolatile ferroelectric LiNbO3 domain wall crossbar memory. IEEE Electron Device Letters. 2023; 44(3): 420—423. https://doi.org/10.1109/LED.2023.3240762; McConville J.P.V., Lu H., Wang B., Tan Y., Cochard C., Conroy M., Moore K., Harvey A., Bangert U., Chen L., Gruverman A., Gregg J.M. Ferroelectric domain wall memristor. Advanced Functional Materials. 2020; 30(28): 2000109. https://doi.org/10.1002/adfm.202000109; Zahn M., Beyreuther E., Kiseleva I., Lotfy A.S., McCluskey C.J., Maguire J.R., Suna A., Rüsing M., Gregg J.M., Eng L.M. R2D2 – An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO3. Condensed Matter. 2023. https://doi.org/10.48550/arXiv.2307.10322; Schröder M., Haußmann A., Thiessen A., Soergel E., Woike T., Eng L.M. Conducting domain walls in lithium niobate single crystals. Advanced Functional Materials. 2012; 22(18): 3936—3944. https://doi.org/110.1002/adfm.201201174; Godau C., Kämpfe T., Thiessen A., Eng L.M., Haußmann A. Enhancing the domain wall conductivity in lithium niobate single crystals. ACS Nano. 2017; 11(5): 4816—4824. https://doi.org/10.1021/acsnano.7b01199; Chai X., Lian J., Wang C., Hu X., Sun J., Jiang J., Jiang A. Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices. Journal of Alloys and Compounds. 2021; 873: 159837. https://doi.org/10.1016/j.jallcom.2021.159837; Wang C., Wang T., Zhang W., Jiang J., Chen L., Jiang A. Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates. Nano Research. 2022; 15(4): 3606—3613. https://doi.org/10.1007/s12274-021-3899-5; Chaudhary P., Lu H., Lipatov A., Ahmadi Z., McConville J.P.V., Sokolov A., Shield J.E., Sinitskii A., Gregg J.M., Gruverman A. Low-voltage domain-wall LiNbO3 memristors. Nano Letters. 2020; 20(8): 5873—5878. https://doi.org/10.1021/acs.nanolett.0c01836; Kislyuk A.M., Ilina T.S., Kubasov I.V., Kiselev D.A., Temirov A.A., Turutin A.V., Shportenko A.S., Malinkovich M.D., Parkhomenko Y.N. Degradation of the electrical conductivity of charged domain walls in reduced lithium niobate crystals. Modern Electronic Materials. 2022; 8(1): 15—22. https://doi.org/10.3897/j.moem.8.1.85251; Shur V.Ya., Baturin I.S., Akhmatkhanov A.R., Chezganov D.S., Esin A.A. Time-dependent conduction current in lithium niobate crystals with charged domain walls. Applied Physics Letters. 2013; 103(10): 102905. https://doi.org/10.1063/1.4820351; Schröder M., Chen X., Haußmann A., Thiessen A., Poppe J., Bonnell D.A., Eng L.M. Nanoscale and macroscopic electrical ac transport along conductive domain walls in lithium niobate single crystals. Materials Research Express. 2014; 1(3): 035012. https://doi.org/10.1088/2053-1591/1/3/035012; Gerson R., Kirchhoff J.F., Halliburton L.E., Bryan D.A. Photoconductivity parameters in lithium niobate. Journal of Applied Physics. 1986; 60(10): 3553—3557. https://doi.org/10.1063/1.337611; Singh E., Beccard H., Amber Z.H., Ratzenberger J., Hicks C.W., Rüsing M., Eng L.M. Tuning domain wall conductivity in bulk lithium niobate by uniaxial stress. Physical Review B. 2022; 106(14): 144103. https://doi.org/10.1103/PhysRevB.106.144103; Qian Y., Zhang Y., Xu J., Zhang G. Domain-wall p-n junction in lithium niobate thin film on an insulator. Physical Review Applied. 2022; 17(4): 044011. https://doi.org/10.1103/PhysRevApplied.17.044011; McCluskey C.J., Colbear M.G., McConville J.P.V., McCartan S.J., Maguire J.R., Conroy M., Moore K., Harvey A., Trier F., Bangert U., Gruverman A., Bibes M., Kumar A., McQuaid R.G.P., Gregg J.M. 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Structure, optical properties and physicochemical features of LiNbO3:Mg,B crystals grown in a single technological cycle: an optical material for converting laser radiation. Materials. 2023; 16(13): 4541. https://doi.org/10.3390/ma16134541; Volk T., Wöhlecke M., Reichert A., Jermann F., Rubinina N. The peculiar impurity concentration ranges in damage-resistant LiNbO3 crystals doped with Mg, Zn, In and Sn. Ferroelectrics Letters Section. 1995; 20(3-4): 97—103. https://doi.org/10.1080/07315179508204289; Hu M.-L., Hu L.-J., Chang J.-Y. Polarization switching of pure and MgO-doped lithium niobate crystals. Japanese Journal of Applied Physics. 2003; 42(12, Pt 1): 7414—7417. https://doi.org/10.1143/JJAP.42.7414; Yatsenko A.V., Evdokimov S.V., Palatnikov M.N., Sidorov N.V. Analysis of the conductivity and current-voltage characteristics nonlinearity in LiNbO3 crystals of various compositions at temperatures 300—450 K. 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Electron small polarons and bipolarons in LiNbO3. Journal of Physics: Condensed Matter. 2009; 21(12): 123201. https://doi.org/10.1088/0953-8984/21/12/123201; Guilbert L., Vittadello L., Bazzan M., Mhaouech I., Messerschmidt S., Imlau M. The elusive role of Nb Li bound polaron energy in hopping charge transport in Fe: LiNbO3. Journal of Physics: Condensed Matter. 2018; 30(12): 125701. https://doi.org/10.1088/1361-648X/aaad34; Faust B., Muller H., Schirmer O.F. Free small polarons in LiNbO3. Ferroelectrics. 1994; 153(1): 297—302. https://doi.org/10.1080/00150199408016583; García-Cabaes A., Sanz-García J.A., Cabrera J.M., Agulló-López F., Zaldo C., Pareja R., Polgár K., Raksányi K., Fölvàri I. Influence of stoichiometry on defect-related phenomena in LiNbO3. Physical Review B. 1988; 37(11): 6085—6091. https://doi.org/10.1103/PhysRevB.37.6085; Kislyuk A.M., Ilina T.S., Kubasov I.V., Kiselev D.A., Temirov A.A., Turutin A.V., Malinkovich M.D., Polisan A.A., Parkhomenko Y.N. 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6Dissertation/ Thesis
Authors: Панявин, И. А., Panyavin, I. A.
Thesis Advisors: Вохминцев, А. С., Vokhmintsev, A. S., УрФУ. Физико-технологический институт, Кафедра физических методов и приборов контроля качества
Subject Terms: MASTER'S THESIS, IMPEDANCE SPECTROSCOPY, MEMRISTIVE STRUCTURE, RESISTIVE SWITCHING, EQUIVALENT CIRCUIT, TITANIUM DIOXIDE, ZIRCONIUM DIOXIDE, МАГИСТЕРСКАЯ ДИССЕРТАЦИЯ, ИМПЕДАНСНАЯ СПЕКТРОСКОПИЯ, МЕМРИСТИВНАЯ СТРУКТУРА, РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, ЭКВИВАЛЕНТНАЯ СХЕМА, ДИОКСИД ТИТАНА, ДИОКСИД ЦИРКОНИЯ
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Availability: http://elar.urfu.ru/handle/10995/140684
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7Dissertation/ Thesis
Authors: Федоров, Д. Д., Fedorov, D. D.
Thesis Advisors: Вохминцев, А. С., Vokhmintsev, A. S., УрФУ. Физико-технологический институт, Кафедра физических методов и приборов контроля качества
Subject Terms: MASTER'S THESIS, SYNAPTIC PLASTICITY, MEMRISTORS, TITANIUM DIOXIDE, MIM-STRUCTURE, CONDUCTION MECHANISM, RESISTIVE SWITCHING, ANODIZING, МАГИСТЕРСКАЯ ДИССЕРТАЦИЯ, СИНАПТИЧЕСКАЯ ПЛАСТИЧНОСТЬ, МЕМРИСТОРЫ, ДИОКСИД ТИТАНА, МДМ-СТРУКТУРА, МЕХАНИЗМ ПРОВОДИМОСТИ, РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, АНОДИРОВАНИЕ
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Availability: http://elar.urfu.ru/handle/10995/140685
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8Review
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9
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10Academic Journal
Authors: Ибрагим, А. Х. А., Бусыгин, А. Н., Удовиченко, С. Ю., Ebrahim, A. Kh. A., Busygin, A. N., Udovichenko, S. Yu.
Subject Terms: мемристор на основе оксида металла, кислородные вакансии и ионы, математическое моделирование, физическая модель массопереноса зарядов, вольт-амперная характеристика, резистивное переключение мемристора, metal oxide memristor, oxygen vacancies and ions, mathematical modeling, physical model of stationary mass transfer of charges, volt-ampere characteristic, resistive switching of the memristor
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Relation: Вестник Тюменского государственного университета. Серия: Физико-математическое моделирование. Нефть, газ, энергетика. – 2022. – Т. 8, № 2(30)
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11Academic Journal
Authors: Шевырталов, Сергей, Коива, Дарья, Гойхман, Александр
Subject Terms: РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, МЕМРИСТОР, АТОМНО-СИЛОВАЯ МИКРОСКОПИЯ, ВОЛЬТ-АМПЕРНЫЕ ХАРАКТЕРИСТИКИ
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12Dissertation/ Thesis
Resistive switching mechanisms of memristors based on nanotubular arrays of anodic zirconium dioxide
Authors: Петренев, И. А., Petrenyov, I. A.
Thesis Advisors: Вохминцев, А. С., Vokhmintsev, A. S., УрФУ. Физико-технологический институт, Кафедра физических методов и приборов контроля качества
Subject Terms: МАГИСТЕРСКАЯ ДИССЕРТАЦИЯ, НАНОТРУБКИ, ДИОКСИД ЦИРКОНИЯ, МЕМРИСТОРЫ, РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, ВОЛЬТ-АМПЕРНЫЕ ХАРАКТЕРИСТИКИ, ФИЛАМЕНТЫ, КВАНТОВАЯ ПРОВОДИМОСТЬ, МЕХАНИЗМЫ ПРОВОДИМОСТИ, АНОДИРОВАНИЕ, MASTER'S THESIS, NANOTUBES, ZIRCONIUM DIOXIDE, MEMRISTORS, RESISTIVE SWITCHING, CURRENT-VOLTAGE CURVES, FILAMENTS, QUANTUM CONDUCTANCE, CONDUCTION MECHANISMS, ANODIZATION
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Availability: http://elar.urfu.ru/handle/10995/107354
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13Academic Journal
Authors: Кундозерова, Т., Черемисин, А., Путролайнен, В.
Subject Terms: АНОДНЫЕ ОКСИДНЫЕ ПЛЕНКИ., ГИБКИЕ ЭЛЕМЕНТЫ ПАМЯТИ, УНИПОЛЯРНОЕ РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, ЭЛЕМЕНТЫ RERAM, ANODIC OXIDE FILMS
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14Academic Journal
Authors: Горшков, О., Антонов, И., Белов, А., Касаткин, А., Тихов, С., Шенина, М., Коряжкина, М.
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15Academic Journal
Authors: Антонов, Д., Филатов, Д., Горшков, О., Дудин, А., Шарапов, А., Зенкевич, А., Матвеев, Ю.
Subject Terms: РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, ДИОКСИД ГАФНИЯ, ТУННЕЛЬНАЯ АСМ, МИГРАЦИЯ ВАКАНСИЙ КИСЛОРОДА, SCANNING TUNNELING MICROSCOPY (STM), TUNNELING ATOMIC FORCE MICROSCOPY (TUNNELING AFM)
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16Academic Journal
Authors: Куроптев, Вадим, Путролайнен, Вадим, Стефанович, Генрих
Subject Terms: ЭЛЕМЕНТЫ RERAM, БИПОЛЯРНОЕ РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, АНОДНЫЕ ОКСИДЫ НИОБИЯ
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17Dissertation/ Thesis
Authors: Petrenyov, I. A.
Contributors: Вохминцев, А. С., Vokhmintsev, A. S., УрФУ. Физико-технологический институт, Кафедра физических методов и приборов контроля качества
Subject Terms: ВОЛЬТ-АМПЕРНЫЕ ХАРАКТЕРИСТИКИ, MEMRISTORS, МАГИСТЕРСКАЯ ДИССЕРТАЦИЯ, MASTER'S THESIS, ZIRCONIUM DIOXIDE, CURRENT-VOLTAGE CURVES, NANOTUBES, НАНОТРУБКИ, ФИЛАМЕНТЫ, РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, RESISTIVE SWITCHING, МЕХАНИЗМЫ ПРОВОДИМОСТИ, ДИОКСИД ЦИРКОНИЯ, АНОДИРОВАНИЕ, FILAMENTS, ANODIZATION, МЕМРИСТОРЫ, КВАНТОВАЯ ПРОВОДИМОСТЬ, QUANTUM CONDUCTANCE, CONDUCTION MECHANISMS
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Access URL: http://elar.urfu.ru/handle/10995/107354
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18Academic Journal
Source: Вестник Балтийского федерального университета им. И. Канта. Серия: Физико-математические и технические науки.
Subject Terms: РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, МЕМРИСТОР, АТОМНО-СИЛОВАЯ МИКРОСКОПИЯ, ВОЛЬТ-АМПЕРНЫЕ ХАРАКТЕРИСТИКИ
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19Academic Journal
Source: Современные проблемы науки и образования.
Subject Terms: АНОДНЫЕ ОКСИДНЫЕ ПЛЕНКИ., ГИБКИЕ ЭЛЕМЕНТЫ ПАМЯТИ, УНИПОЛЯРНОЕ РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ, ЭЛЕМЕНТЫ RERAM, ANODIC OXIDE FILMS
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20Academic Journal
Source: Вестник Нижегородского университета им. Н.И. Лобачевского.
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